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Growth of HfSixOy/ HfO2 Thin Film onSi Substrate by Microwave Generated Remote Plasma Assisted Atomic LayerDeposition Techniques

Published online by Cambridge University Press:  22 February 2016

Hiroki Ishizaki
Hiroki Ishizaki*
Affiliation:
Saitama Institute of technology, 1690 Fusaiji, Fukaya, Saitama, 369-0293, Japan
*
*(Email: [email protected])
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Abstract

In this paper, we will report on the formation of HfSixOylayer on an HF-last Si(100) substrate by atomic layer deposition fromtetrakis(dimethylamido)hafnium (TDMAH) and atomic oxygen generated by amicrowave remote plasma. Transmission electron microscopy observations ofHfSixOy /Si structures deposited at 100 and300℃ revealed that 3∼5-nm-thick amorphousHfSixOy layers were unintentionally formed precededthe growth of crystalline Hf-rich HfSixOy layers. Tounderstand the mechanism of this unintentional growth ofHfSixOy, the depth profiles of Hf, O and Si elements weremeasured by X-ray photoelectron spectroscopy. It was found that Hf atoms deeplydiffused into the Si substrate. From these results, suppression of Hf indiffusion to the Si substrate must be important to reduce the capacitanceequivalent thickness of the metal-oxide-semiconductor capacitors. The roles ofTDMAH and plasma-generated oxygen radical on the enhanced diffusion of Hf willbe discussed in detail.

Keywords

ceramicdevicesnanostructure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 4: Electronics and Photonics , 2016 , pp. 311 - 316
Copyright
Copyright © Materials Research Society 2016 

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