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Goniometry Versus Profilometry Studies of Contact Angle for PEDOT:PSS Deposited Onto Silicon and Fused Silica Substrates

Published online by Cambridge University Press:  22 December 2015

Kenneth D. Shaughnessy
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Emma G. Langford
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
Chester Szwejkowski
Affiliation:
Departmnet of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
Patrick Hopkins
Affiliation:
Departmnet of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904
Costel Constantin*
Affiliation:
Department of Physics and Astronomy, James Madison University, Harrisonburg, VA 22807
*
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Abstract

This paper presents a comparative study on the effects of plasma type and duration on the contact angle of silicon (Si) and fused silica (FS) for the deposition of Poly (3,4 ethyldioxythiophene) Polystyrene Sulfonate (PEDOT:PSS) via drop casting. The two methods used to measure contact angles were goniometry and profilometry. Both methods agreed that the lowest contact angles were given by: 1) 30 seconds in nitrogen/oxygen mix for Si substrates, and 2) 10 minutes in pure oxygen plasma for FS substrates.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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