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Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

Published online by Cambridge University Press:  22 January 2018

Takuji Tsujita ,
Yukihiro Morita  and
Mikihiko Nishitani
Takuji Tsujita*
Affiliation:
Advanced Research Division, Panasonic Corporation, Kadoma, Osaka, Japan Panasonic Science Research Alliance Laboratory, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan
Yukihiro Morita
Affiliation:
Advanced Research Division, Panasonic Corporation, Kadoma, Osaka, Japan Panasonic Science Research Alliance Laboratory, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan
Mikihiko Nishitani
Affiliation:
Panasonic Science Research Alliance Laboratory, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan
*
*(Email: [email protected])
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Abstract

Multilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

Keywords

nanostructureatomic layer depositionelectrical properties
Type
Articles
Information
MRS Advances , Volume 3 , Issue 23: Energy and Sustainability , 2018 , pp. 1285 - 1290
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Copyright
Copyright © Materials Research Society 2018 

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References

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