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Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates

Published online by Cambridge University Press:  20 December 2016

Fuminori Mitsuhashi ,
Masaya Okada ,
Yasunori Tateno ,
Takashi Nakabayashi ,
Masaki Ueno ,
Hiroyuki Nagasawa ,
Hirokazu Fukidome  and
Maki Suemitsu
Fuminori Mitsuhashi*
Affiliation:
Semiconductor Technologies Laboratory, Sumitomo Electric Industries, Ltd., Koya-kita 1-1-1, Itami, Hyogo, Japan
Masaya Okada
Affiliation:
Semiconductor Technologies Laboratory, Sumitomo Electric Industries, Ltd., Koya-kita 1-1-1, Itami, Hyogo, Japan
Yasunori Tateno
Affiliation:
Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., Taya 1, Sakae-ku, Yokohama, Kanagawa, Japan
Takashi Nakabayashi
Affiliation:
Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., Taya 1, Sakae-ku, Yokohama, Kanagawa, Japan
Masaki Ueno
Affiliation:
Semiconductor Technologies Laboratory, Sumitomo Electric Industries, Ltd., Koya-kita 1-1-1, Itami, Hyogo, Japan
Hiroyuki Nagasawa
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, Japan
Hirokazu Fukidome
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, Japan
Maki Suemitsu
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai, Miyagi, Japan
*
*(Email: [email protected])
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Abstract

A novel method to fabricate uniform epitaxial graphene on C-face SiC substrates was investigated. Graphene was grown on the C-face 6H-SiC substrates with a sputtered SiC film by annealing temperatures ranging from 1400 to 1900 °C under an Ar ambient. The fractional area of the graphene having the layer number of two was about 95% in a 75×75 μm square by a Raman mapping and a low energy electron microscopy. Graphene on the C-face SiC fabricated by this method is quite uniform compared to that made by a conventional method without the sputtered SiC films and is thus suitable for high frequency analog devices.

Keywords

nanostructurecrystal growthtransmission electron microscopy (TEM)
Type
Articles
Information
MRS Advances , Volume 2 , Issue 1: Nanomaterials , 2017 , pp. 51 - 56
Copyright
Copyright © Materials Research Society 2016 

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References

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