Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-03T05:38:57.237Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction

Published online by Cambridge University Press:  08 January 2016

Hasan Goktas  and
Volker J. Sorger
Hasan Goktas
Affiliation:
Electrical and Computer Engineering, The George Washington University, 2121 I St. NW, Washington, DC 20052
Volker J. Sorger*
Affiliation:
Electrical and Computer Engineering, The George Washington University, 2121 I St. NW, Washington, DC 20052
*
*(Email: [email protected])
Get access

Abstract

Here we fabricated and characterized a CMOS compatible metal-insulator-semiconductor (MIS) plasmonic tunnel junction for Si-based photonic circuitry. A grating structure was realized on MIS plasmonic tunnel junction via focused-ion-beam milling (FIB) to increase the intensity of the light emission that occurs during inelastic electron tunneling. Approximately 65 times higher intensity of light emission is achieved with the grating structure during the measurements.

Keywords

opticaloptoelectronicphotoemission
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1709 - 1713
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Gramotnev, D. K., Bozhevolnyi, S. I. Nature Photonics 4, 83–91 (2010).Google Scholar
Oulton, R. F., Sorger, V. J., Zentgraf, T., Ma, R.-M., Gladden, C., Dai, L., Bartal, G., and Zhang, X., Nature 461, 629–632 (2009).Google Scholar
Lambe, J. and McCarthy, S.L., Physical Review Letters, 37, 923–925 (1976).Google Scholar
Liu, C.W., Lee, M.H., Lin, C.F., Lin, I.C., Liu, W.T., and Lin, H.H., IEEE Electron Device Meeting, 749-752 (1999)Google Scholar
Chang, S.T., Chen, K.F., Shie, C. R., Liu, C. W., Chen, Miin-Jang, Lin, Ching-Fuh, Solid State Electronics 8, 1113–1116 (2002)CrossRefGoogle Scholar
Oulton, R. F., Sorger, V. J., Zentgraf, T., Ma, R.-M., Gladden, C., Dai, L., Bartal, G., and Zhang, X., Nature 461, 629–632 (2009).Google Scholar
Ma, R.-M., Oulton, R. F., Sorger, V. J., Bartal, G. and Zhang, X. Nature Materials 10, 110–113 (2010).Google Scholar
Sorger, V. J., Pholchai, N., Cubukcu, E., Oulton, R. F., Kolchin, P., Borschel, C., Gnauck, M., Ronning, C., and Zhang, X., Nano Letters, 11, 4907–4911 (2011)Google Scholar
Davis, L.C., Physical Review B 16, 2482–2490 (1977).Google Scholar