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Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

Published online by Cambridge University Press:  15 February 2016

Chao Hu ,
Zhangcheng Liu ,
Jingwen Zhang ,
Wei Wang  and
Hong-Xing Wang
Chao Hu
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Zhangcheng Liu
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Jingwen Zhang
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Wei Wang
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Hong-Xing Wang*
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
*
*(Email: [email protected])
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Abstract

Schottky properties of Mo on diamond with fluorine- and oxygen-termination had been investigated. Oxygen-termination was generated by aqua regia. Fluorine-termination was generated by CF4 plasma treatment. Mo/Ni/Au was deposited on the diamond surface as Schottky electrode, whose barrier height was evaluated from current-voltage curve. After that, the X-ray photoelectron spectroscopy methods were applied to calculate the Schottky barrier height of Mo on different termination surface. The results indicated that the fluorine-termination and oxygen-termination show different schottky properties.

Keywords

diamondelectrical propertiesx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 16: Electronics and Photonics , 2016 , pp. 1125 - 1130
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Kawarada, H., Surf. Sci. Rep, 26, 205 (1996).Google Scholar
Cui, J. B., Ristein, J. & Ley, L. Phys. Rev. Lett. 81, 429–432 (1998).Google Scholar
Maier, F., Ristein, J. & Ley, L. Phys. Rev. B 64, 165411 (2001).Google Scholar
Torrengo, S, Minati, L, Filippi, M, et al. , 18(5) 804–807 (2009).Google Scholar
Liu, J W, Liao, M Y, Imura, M, et al. Applied Physics Letters, 105(8): 082110, (2014).CrossRefGoogle Scholar
Liao, M, Koide, Y. Applied physics letters, 89(11): 3509, (2006).Google Scholar
Liu, Zhangcheng, Li, Fengnan, Li, Shuoye, et al. Scientific Reports, 5, 14420, (2015).Google Scholar
Kraut, E. A., Grant, R. W., Waldrop, J. R., et al. , Phys. Rev. Lett. 44, 1620 (1980).Google Scholar
Widmann, C J, Giese, C, Wolfer, M, et al. Physica Status Solidi Applications & Materials, 211(10):2328–2332 (2014).Google Scholar
Wang, W, Hu, C, Li, F N, et al. Diamond and Related Materials, 59: 90–94,(2015).Google Scholar
Kono, S, Kodama, H, et al. Japanese Journal of Applied Physics, 53(5S1): 05FP03 (2014).Google Scholar
Liu, J, Cheng, S, Liao, M, et al. Diamond and Related Materials, 2013, 38: 24–27.Google Scholar
Maier, F., Ristein, J., and Ley, L., Phys. Rev. B 64, 165411 (2001).Google Scholar
Wilson, J. I. B., Walton, J. S., and Beamson, G., Journal of Electron Spectroscopy and Related Phenomena 121 (1-3), 183 (2001).Google Scholar
Karlsson, M., Forsberg, P., and Nikolajeff, F., Langmuir 26 (2), 889 (2010).Google Scholar