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Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor for Electrical Devices

Published online by Cambridge University Press:  24 January 2017

Kentaro Kaneko ,
Masashi Kitajima  and
Shizuo Fujita
Kentaro Kaneko
Affiliation:
Photonics and Electronic Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Masashi Kitajima
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Shizuo Fujita*
Affiliation:
Photonics and Electronic Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
*
*(Email: [email protected])
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Abstract

Corundum-structured α-In2O3 was grown by mist chemical vapor deposition (CVD) on sapphire substrates with the use of α-Ga2O3 buffer layers. The use of ozone (O3) and thermal annealing in air were effective for improved surface morphology and electrical properties of the α-In2O3 layer. MOSFETs were fabricated using the α-In2O3 layer, where the residual electron concentrations were temporary reduced by doping Mg acceptors. Nevertheless the MOSFETs showed the best field-effect mobility of as high as 187 cm2/V⋅s and the best effective mobility of as high as 240 cm2/V⋅s, suggesting high potential of α-In2O3 MOSFETs.

Keywords

chemical vapor deposition (CVD) (deposition)oxidethin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 5: Electronics, Magnetics and Photonics , 2017 , pp. 301 - 307
Copyright
Copyright © Materials Research Society 2017 

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