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Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Published online by Cambridge University Press:  10 January 2018

V. Mortet ,
A. Taylor ,
M. Davydova ,
L. Fekete ,
Z. Vlčková Živcová ,
L. Klimša ,
N. Lambert ,
P. Hubík ,
D. Trémouilles  and
A. Soltani
V. Mortet*
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic Czech Technical University, Faculty of Biomedical Engineering, Sportovců 2311, 272 01 Kladno, Czech Republic
A. Taylor
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
M. Davydova
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
L. Fekete
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
Z. Vlčková Živcová
Affiliation:
J. Heyrovsky Institute of Physical Chemistry of the Czech Academy of Sciences, Dolejškova 3, 182 23 Prague 8, Czech Republic
L. Klimša
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
N. Lambert
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
P. Hubík
Affiliation:
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic
D. Trémouilles
Affiliation:
LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France
A. Soltani
Affiliation:
LN2, Université de Sherbrooke, 3000 Boul. de l’Universite, Sherbrooke J1K 0A5, Canada
*
*(Email: [email protected])
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Abstract

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.

Keywords

diamondelectrical propertiesRaman spectroscopy
Type
Articles
Information
MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1931 - 1935
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Copyright
Copyright © Materials Research Society 2018 

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