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Characterization of LPE-Ga0.86In0.14As0.13Sb0.87

Published online by Cambridge University Press:  05 September 2017

J. Díaz-Reyes*
Affiliation:
Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional. Ex-Hacienda de San Juan Molino Km. 1.5. Tepetitla, Tlaxcala. 90700. México.
J. S. Arias-Cerón
Affiliation:
Catedrático CONACYT, Depto. de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. AP. 14-740. México City. 07000. México.
J. G. Mendoza-Álvarez
Affiliation:
Depto de Física, CINVESTAV-IPN. AP. 14-740. México City. 07000. México.
J. L. Herrera-Pérez
Affiliation:
UPIITA, Instituto Politécnico Nacional. Av. Instituto Politécnico Nacional 2580, Barrio La Laguna, Ticomán. México City. 07340. México.
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Abstract

Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)-type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration.

Type
Articles
Copyright
Copyright © Materials Research Society 2017 

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References

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