Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-23T12:58:59.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Analytical Study of the Thermal Activation of Tb Doped Amorphous SiC:H Thin Films

Published online by Cambridge University Press:  17 June 2016

J. A. Guerra ,
K. Tucto ,
L. M. Montañez ,
F. De Zela ,
J. A. Töfflinger ,
A. Winnaker  and
R. Weingärtner
J. A. Guerra*
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
K. Tucto
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
L. M. Montañez
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
F. De Zela
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
J. A. Töfflinger
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
A. Winnaker
Affiliation:
Department of Material Science 6, University of Erlangen-Nuremberg, Martenstr. 6, Erlangen 91058, Germany
R. Weingärtner
Affiliation:
Departamento de Ciencias, Sección Física, Pontificia Universidad Católica del Perú, Av. Universitaria 1801, Lima 32, Perú
*
*(Email: [email protected])
Get access

Abstract

The luminescence of Tb-doped a-SiC:H thin films with different Tb concentrations under sub-bandgap photon excitation was investigated. Two independent processes were identified. The annealing induced activation of the Tb3+ and the inhibition of host-mediated non-radiative recombination paths. The integrated emission intensity is described by a rate equation model, considering these two. In this study, the luminescence enhancement with increasing annealing temperature is shown. The optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity is determined. Finally, a parameter proportional to the number of optically active ions is found through the aforementioned model.

Keywords

Tbamorphousluminescence
Type
Articles
Information
MRS Advances , Volume 1 , Issue 38: Materials Design , 2016 , pp. 2689 - 2694
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kenyon, A. J., Prog. Quant. Elec. 26 225 (2002).CrossRefGoogle Scholar
Park, J. H. and Steckl, A. J., J Appl. Phys. Lett. 85 4588 (2004).CrossRefGoogle Scholar
Nishikawa, A., Furuwa, N., Kawaski, T., Terai, Y. and Fujiwara, Y., Opt. Mater. 33 1071 (2011).CrossRefGoogle Scholar
Pavani, K., Suresh Kumar, J. and Rama Moorthy, L., Mat. Res. Exp 1 016201 (2014).CrossRefGoogle Scholar
Zanatta, A. R., J. Appl. Phys. 82 1395 (2003).Google Scholar
Zanatta, A. R., J.Phys. D: Appl. Phys. 42 025109 (2009).CrossRefGoogle Scholar
Zanatta, A. R., J. Appl. Phys. 111 123105 (2012).CrossRefGoogle Scholar
Janotta, A., Schmidt, M., Janssen, R. and Stutzmann, M., Phys. Rev. B 68 165207 (2003).CrossRefGoogle Scholar
Uekusa, S., Awahara, K. and Kumagai, M., IEEE Trans. Electron Dev. 46 572 (1999).CrossRefGoogle Scholar
Bullot, J. and Schmidt, M. P., Phys. Status Solidi (C) 143 345 (1987).CrossRefGoogle Scholar
Kalomiros, J. A., Papadopoulos, A. and Logotheidis, S., Phys. Rev. B 49 8191 (1994).CrossRefGoogle Scholar
Ishimaru, M., Bae, I., Hirotsu, Y., Matsumura, S. and Sickafus, K. E., Phys. Rev. Lett. 89 055502 (2002).CrossRefGoogle Scholar
Mat, T., Xu, J., Li, W., Huang, X. and Chen, K., J. Appl. Phys. 88 6408 (2000).Google Scholar
Chew, K., Yoon, S. F., Ahn, J. and Ligatchev, V., J. Appl. Phys. 92 2937 (2002).CrossRefGoogle Scholar
Guerra, J. A., Angulo, J. R., Gomez, S., Llamoza, J., Montañez, L. M., Tejada, A., Töfflinger, J. A., Winnacker, A. and Weingärtner, R., J. Phys. D: Appl. Phys. 49 195102 (2016).CrossRefGoogle Scholar
Benz, F., Guerra, J. A., Weng, Y., Zanatta, A. R., Weingärtner, R. and Strunk, H. P., J. Lumin. 137 73 (2013).CrossRefGoogle Scholar
Guerra, J. A., Montañez, L., Winnacker, A., De Zela, F. and Weingärtner, R., Phys. Status Solidi C 12 1183 (2015).CrossRefGoogle Scholar
Benz F, F., Guerra, J. A., Weingärtner, R. and Strunk, H. P., Phys. Status Solidi C 10 109 (2013).CrossRefGoogle Scholar
Benz, F., Yang, M., Weng, Y. and Strunk, H. P., J. Lumin 132 1493 (2012).CrossRefGoogle Scholar
Huber, D. L., Phys. Rev. B 20 2307 (1979).CrossRefGoogle Scholar
Guerra, J. A., Benz, F., Zanatta, A. R., Strunk, H. P., Winnacker, A. and Weingärtner, R., Phys. Status Solidi (C) 10 68 (2013).CrossRefGoogle Scholar