Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-29T01:30:54.962Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

Published online by Cambridge University Press:  03 May 2019

J Pan ,
S. Afroz ,
N. Crain ,
W. Henning ,
J. Oliver  and
T. Knight
J Pan*
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
S. Afroz
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
N. Crain
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
W. Henning
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
J. Oliver
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
T. Knight
Affiliation:
Advanced Technology Laboratory, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, Maryland, 21090, U.S.A.
*
*E-mail: [email protected]
Get access

Abstract

In this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

Keywords

dielectricdielectric propertieselectronic materialmicroelectronicsoxidation
Type
Articles
Information
MRS Advances , Volume 4 , Issue 44-45: Characterization, Processing and Theory , 2019 , pp. 2377 - 2382
Check for updates
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Chen, S., IEEE J. of Emerging Selected Topics in Power Electronics, Vol. 4, No. 3, SEP. 2016CrossRefGoogle Scholar
Fuerherm, J., International Semiconductor Device Research Symposium, 2003 Pages: 134 - 135, DOI: 10.1109/ISDRS.2003.1272030Google Scholar
Uhlemann, A.. CIPS 2016; 9th International Conference on Integrated Power Electronics Systems Year: 2016 Pages: 1 - 6Google Scholar
Pan, J. N., 2017 International Conference of Silicon Carbide and Related Materials, Washington DC, USA., Materials Science Forum ISSN: 1662-9752, Vol. 924, pp 641-644.Google Scholar
Lang, D. V, J. Appl. Phys. 45, 3023-3032 (1974).CrossRefGoogle Scholar
Pan, J. N., Mat. Res. Soc. Symp. Proc. Vol. 745 2003 Materials Research Society N3.2Google Scholar