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An Analysis of Static and Dynamic Characteristics of 12kV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures

Published online by Cambridge University Press:  03 May 2018

Pavan Vudumula  and
Siva Kotamraju
Pavan Vudumula
Affiliation:
Department of Electronics and Communication Engineering, IIIT Sricity, A.P., INDIA.
Siva Kotamraju*
Affiliation:
Department of Electronics and Communication Engineering, IIIT Sricity, A.P., INDIA.
*
*(Email: [email protected])
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Abstract

In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.

Keywords

simulationdielectricdevices
Type
Articles
Information
MRS Advances , Volume 3 , Issue 59: Electronic and Photonic Materials , 2018 , pp. 3433 - 3438
Copyright
Copyright © Materials Research Society 2018 

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References

Östling, M., Ghandi, R. and Zetterling, C.M.,ISPSD, 2011, pp. 10–15.Google Scholar
Lelis, A. J., Green, R., Habersat, D. B. and El, M., IEEE Trans. Electron Devices, 62 (2), 316–323(2015).CrossRefGoogle Scholar
Cheong, K. Y., Moon, J. H., Park, T. J., Kim, J. H., Hwang, C. S., Kim, H. J., Bahng, W. and Kim, N. K., IEEE Trans. Electron Devices, 54 (12), 3409–3413 (2007).CrossRefGoogle Scholar
Usman, M. and Nawaz, M., Solid-State Electron, 92 (2014), pp. 5–11.CrossRefGoogle Scholar
SentaurusTM Device user guide, Synopsys Inc., 2016, Version M-2016.12.Google Scholar
Potbhare, S., Goldsman, N., Lelis, A., McGarrity, J. M., McLean, F. B. and Habersat, D., IEEE Trans. Electron Devices, 55(8), 2029–2040 (2008).CrossRefGoogle Scholar
Tamaki, T., Walden, G. G., Sui, Y. and Cooper, J. A, IEEE Trans. Electron Devices, 55 (8), 1928–1933 (2008).CrossRefGoogle Scholar