Microscopy in Nanoscience and Nanotechnology
Abstract
Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology
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- 31 July 2006, pp. 718-719
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Self-hardening of Nanocrystalline Ti-B-N Thin Films
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- 31 July 2006, pp. 720-721
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The reaction interface between MgO and Al2O3
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- 31 July 2006, pp. 722-723
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TEM Studies of Oxides Formed on Nickel-Based Alloys in Secondary Side Water
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- 31 July 2006, pp. 724-725
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Elemental Quantification of Hafnium–Silicates by Electron Energy Loss Spectroscopy
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- 31 July 2006, pp. 726-727
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A TEM Study on the Doping Behavior of Calcium in LaCoO3
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- 31 July 2006, pp. 728-729
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Electron Microscopy Study of Zinc Silicate Coated Diatom Frustules
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- 31 July 2006, pp. 730-731
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Microstructure Investigation of Hydrous Ruthenium Oxides Coatings with Carbon-Nanotube Additive by Cathodic Deposition Method
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- 31 July 2006, pp. 732-733
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Analysis of Contamination in Nanoscaled Film Structures with TEM & XPS
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- 31 July 2006, pp. 734-735
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Nanostructure Obtained by Sol-gel Acrylamide Polymerization in Y-V-O System
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- 31 July 2006, pp. 736-737
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Formation of Nanocrystalline Zeolites in Geopolymer Gels
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- 31 July 2006, pp. 738-739
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Micro-structural Characterization of Inorganic Cryptomelane Nanomaterials Synthesized by Use of Controlled O2 and Cold Aging in Acidic Conditions
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- 31 July 2006, pp. 740-741
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Microstructural Study of Metastable ZrO2-Al2O3 and ZrO2-Y2O3-Al2O3 Coatings Deposited Using Solution-Precursor Plasma Spray (SPPS) Process
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- 31 July 2006, pp. 742-743
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Nanostructural Characterization of YBa2Cu3O7-x Layers with BaZrO3 Rods Fabricated by Pulsed-Laser Deposition
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- 31 July 2006, pp. 744-745
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Characterization of Porous GaN-Nanostructured Rods by TEM Techniques
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- 31 July 2006, pp. 746-747
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Electronic Structure and Luminescence Properties of Er Doped ZnO Nanowires
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- 31 July 2006, pp. 748-749
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Semiconductors
Abstract
A Study on Phase Separation in InGaN/GaN Multi-quantum Wells
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- 31 July 2006, pp. 750-751
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Application of an Improved Mathematical Model to the Analysis of Cross-Sectional EBIC of GaN-Based LEDs
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- 31 July 2006, pp. 752-753
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Effect of the Growth Temperature in the Composition Fluctuation of GaInNAs/GaAs Quantum Wells
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- 31 July 2006, pp. 754-755
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Transverse Bragg Gratings and Lasers Fabricated by Electron Beam Lithography and Reactive Ion Etching
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- 31 July 2006, pp. 756-757
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