Article contents
Oxidation in air of nitride bonded silicon carbide ceramic
Published online by Cambridge University Press: 15 June 2004
Abstract
The rate of air oxidation towards 1,000°C of the Si3N4-bonded silicon carbide refractory is low. It is found that the porous nitride-bonding phase oxidizes mainly and that the SiC oxidation is negligible. The decrease of specific surface area, due to the growing of a dense silica layer, induces much slower kinetics.
- Type
- Research Article
- Information
- Metallurgical Research & Technology , Volume 101 , Issue 5: Science et Génie des Matériaux , May 2004 , pp. 427 - 439
- Copyright
- © La Revue de Métallurgie, 2004
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