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Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

Published online by Cambridge University Press:  13 June 2014

Takeshi Uenoyama
Takeshi Uenoyama*
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seikacho, Sourakugun, Kyoto 619-0237, Japan, Fax: +81-774-98-2586/Tel: +81-774-98-2511/E-mail: [email protected]

Abstract

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The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Type
Research Article
Information
Materials Research Society Internet Journal of Nitride Semiconductor Research , Volume 4 , Issue S1 , 1999 , pp. 112 - 117
Copyright
Copyright © 1999 Materials Research Society

References

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