Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-29T05:39:13.220Z Has data issue: false hasContentIssue false
  • English
  • Français

Radiation-induced conductivity: High-speed detection of X rays and neutrons

Published online by Cambridge University Press:  09 March 2009

D. R. Kania
D. R. Kania
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Get access Rights & Permissions [Opens in a new window]

Abstract

Radiation-induced conductivity (RIC) is a generalized term for photoconductivity expanded to include nonelectromagnetic radiation. RIC offers several distinct advantages for the detection of high-energy radiation: (i) the speed of response of a detector is determined by a bulk property of the material, the carrier lifetime; (ii) the detector can be directly illuminated by the signal radiation-no dead layer; and (iii) the selection of the detector material and its geometry is very flexible. This paper will discuss the principles of RIC for X rays and neutrons, the fabrication of detectors, and applications. RIC detectors have been fabricated from Si, InP, GaAs, and diamond. Bulk and thin film materials have been used. The carrier lifetime was varied by the introduction of trapping sites in the material. This can be done in the material production process in the case of doping (e.g., Fe in InP) and thin films or produced from radiation damage of a pure crystalline material. Lifetimes as short as a few picoseconds have been observed. A variety of detectors have been tested using pulsed optical, X ray, and neutron sources. Absolute sensitivities and temporal response has been measured and compared to theoretical models of the detector's performance for both X rays and neutrons. Finally, applications of these detectors to inertial confinement fusion measurement will be shown.

Type
Research Article
Information
Laser and Particle Beams , Volume 9 , Issue 1 , March 1991 , pp. 91 - 97
Copyright
Copyright © Cambridge University Press 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bube, R. H. 1978 Photoconductivity of Solids (Robert Krieger, New York).Google Scholar
Kania, D. R. et al. 1984 Appl. Phys. Lett., 44, 1059.CrossRefGoogle Scholar
Kania, D. R. et al. 1987 17th International Anomalous Absorption Conference, Tahoe City, CA.Google Scholar
Kania, D. R., Lane, S. M. & Prussin, S. G. 1989 Appl. Phys. Lett., 53, 1988.CrossRefGoogle Scholar
Kania, D. R. et al. 1989a submitted to Jour. Appl. Phys.Google Scholar
Kilkenny, J. D. et al. 1988 12th International Conference on Plasma Physics and Controlled Nuclear Fusion, Nice, France.Google Scholar
Lee, C. 1984 Picosecond Optoelectronic Devices (Academic Press, New York).Google Scholar
Morse, J. D. 1989 Private communication.Google Scholar
Pan, L. S., Pianetta, P. & Kania, D. R. 1988 Diamond Technology Initiative Symposium (Arlington, VA).Google Scholar
Restelli, G. & Rota, A. 1968 Semiconductor Detectors (John Wiley, New York), Bertoloni, G. & Coche, A., eds., pp. 75–99.Google Scholar
Wagner, R. S., Bradley, J. M. & Hammond, R. B. 1986 IEEE Trans. Nucl. Sci., NS-33, 150.Google Scholar