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Nanolithography for VLSI and ULSI

Published online by Cambridge University Press:  09 March 2009

Susumu Namba
Affiliation:
Faculty of Engineering Science and Research Institute for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan

Abstract

Lithography techniques hold the key to achieving ultra large-scale integration (ULSI) and they have been a major research subject. For fabrication of ULSI devices, a quarter micron or smaller pattern delineation with nanometer scale accuracy is required. Various techniques using electron, ion and photon beams have been investigated to fulfill these requirements. The present paper discusses the characteristics of several key lithography techniques and their limitations.

Type
Research Article
Copyright
Copyright © Cambridge University Press 1989

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