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Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

Published online by Cambridge University Press:  22 December 2016

M. Cutroneo ,
A. Mackova ,
L. Torrisi  and
V. Lavrentiev
M. Cutroneo*
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic INFN, Sez. CT, Gruppo Coll. ME, V.le F.S. d'Alcontres 31, 98166 S. Agata (ME), Italy
A. Mackova
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic Department of Physics, Faculty of Science, J.E. Purkinje University, Ceske mladeze 8, 400 96 Usti nad Labem, Czech Republic
L. Torrisi
Affiliation:
Department of Physics Sciences, Messina University, V.le F.S. d'Alcontres 31, 98166 S. Agata, Messina, Italy
V. Lavrentiev
Affiliation:
Department of Neutron Physics, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic
*
Address correspondence and reprint requests to: M. Cutroneo, Nuclear Physics Institute, AS CR, 25068 Rez, Czech Republic. E-mail: [email protected]
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Abstract

This work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration–depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

Keywords

Laser ion implantationPost-acceleration
Type
Research Article
Information
Laser and Particle Beams , Volume 35 , Issue 1 , March 2017 , pp. 72 - 80
Copyright
Copyright © Cambridge University Press 2016 

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