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Development of an X-ray photoelectron microscopic system with a compact X-ray source

Published online by Cambridge University Press:  05 August 2002

CHIEMI FUJIKAWA
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan Present address: Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi 243-0297, Japan.
NAOHIRO YAMAGUCHI
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
TADAYUKI OHCHI
Affiliation:
National Institute of Materials and Chemical Research, 1-1 Higashi, Tsukuba 305-8565, Japan
TAMIO HARA
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
KATSUMI WATANABE
Affiliation:
ULVAC-PHI Inc., 370 Enzo, Chigasaki 253-0084, Japan
IBUKI TANAKA
Affiliation:
ULVAC-PHI Inc., 370 Enzo, Chigasaki 253-0084, Japan
MASAMI TAGUCHI
Affiliation:
ULVAC-PHI Inc., 370 Enzo, Chigasaki 253-0084, Japan

Abstract

We have constructed an X-ray photoelectron microscopic system. An X-ray source is a laser-produced plasma in a scheme of an X-ray laser experiment. X rays involving amplified spontaneous emissions (ASE) at 15.47 nm were delivered with a 10-Hz repetition rate from a compact X-ray laser system. X rays were collected and focused by a Schwarzschild optics coated with Mo/Si multilayers for a 15.47-nm X ray. Photoelectron signals due to the Ga 3d and As 3d electrons were observed, when a GaAs wafer was used as a sample. The spatial resolution of about 1 μm was confirmed.

Type
Research Article
Copyright
© 2002 Cambridge University Press

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