Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-24T16:44:54.774Z Has data issue: false hasContentIssue false
  • English
  • Français

Dependence of silicon ablation regimes on fluence during ultrafast laser irradiation

Published online by Cambridge University Press:  07 January 2016

M. Polek  and
A. Hassanein
M. Polek*
Affiliation:
Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
A. Hassanein
Affiliation:
Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA
*
Address correspondence and reprint requests to: M. Polek, Center for Materials Under eXtreme Environment (CMUXE), School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907, USA. E-mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

Models and experiments were developed to study femtosecond laser ablation of silicon using 800 nm, 40 fs pulses with fluences ranging from 0.5 to 35 J/cm2. At low fluences, ablation was found to occur due to bubble formation and splashing within the melt layer. At higher fluences, it was found that the ablation depth exceeded the melt layer depth due to shockwave ablation. The variation in ion flux and ion velocity was also studied both experimentally and theoretically. It was found that the variation in ion flux is mainly dependent on the variation in the average charge state, with only a small variation in the total number of ions above $\sim \!\!1.5\; \,{\rm J/c}{{\rm m}^2}$. Comparisons between the theoretical and experimental ion flux showed that higher charge state ions received greater portion of the laser energy compared with lower charge state ions.

Keywords

AblationFemtosecond laserIon propertiesModeling
Type
Research Article
Information
Laser and Particle Beams , Volume 34 , Issue 1 , March 2016 , pp. 143 - 150
Copyright
Copyright © Cambridge University Press 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Anoop, K.K., Polek, M.P., Bruzzese, R., Amoruso, S. & Harilal, S.S. (2015). Multidiagnostic analysis of ion dynamics in ultrafast laser ablation of metals over a large fluence range. J. Appl. Phys. 117, 083108. doi: 10.1063/1.4913505.CrossRefGoogle Scholar
Bonse, J., Baudach, S., Krüger, J., Kautek, W. & Lenzner, M. (2002). Femtosecond laser ablation of silicon–modification thresholds and morphology. Appl. Phys. A 74, 19–25.Google Scholar
Byskov-Nielsen, J., Savolainen, J.-M., Christensen, M. & Balling, P. (2010). Ultra-short pulse laser ablation of metals: threshold fluence, incubation coefficient and ablation rates. Appl. Phys. A 101, 97–101.Google Scholar
Callen, J. (2003). Fundamentals of Plasma Physics. Lecture Notes. Madison: University of Wisconsin.Google Scholar
Chen, F.F. & Trivelpiece, A. (1976). Introduction to plasma physics. Phys. Today 29, 54.CrossRefGoogle Scholar
Chung, H.-K., Chen, M., Morgan, W., Ralchenko, Y. & Lee, R. (2005). FLYCHK: Generalized population kinetics and spectral model for rapid spectroscopic analysis for all elements. High Energy Density Phys. 1, 3–12.CrossRefGoogle Scholar
Coyne, E., O'connor, G.M., Mannion, P., Magee, J. & Glynn, T.J. (2004). Analysis of thermal damage in bulk silicon with femtosecond laser micromachining. Lasers and Applications in Science and Engineering, 2004. International Society for Optics and Photonics, pp. 73–83.Google Scholar
Derrien, T.J., Sarnet, T., Sentis, M. & Itina, T.E. (2010). Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interaction. J. Optoelec. Advan. Mater. 12, 610–615.Google Scholar
Drake, R.P. (2010). High-energy-density physics. Phys. Today 63, 28–33.Google Scholar
Fisher, D., Fraenkel, M., Zinamon, Z., Henis, Z., Moshe, E., Horovitz, Y., Luzon, E., Maman, S. & Eliezer, S. (2005). Intraband and interband absorption of femtosecond laser pulses in copper. Laser Part. Beams 23, 391–393.Google Scholar
Hohlfeld, J., Wellershoff, S.-S., Güdde, J., Conrad, U., Jähnke, V. & Matthias, E. (2000). Electron and lattice dynamics following optical excitation of metals. Chem. Phys. 251, 237–258.Google Scholar
Kirkwood, S., Tsui, Y., Fedosejevs, R., Brantov, A. & Bychenkov, V.Y. (2009). Experimental and theoretical study of absorption of femtosecond laser pulses in interaction with solid copper targets. Phys. Rev. B 79, 144120.CrossRefGoogle Scholar
Kittel, C. & Kroemer, H. (1980). Thermal Physics. New York: W.H. Freeman and Company.Google Scholar
Komashko, A. (2003). Laser-Material Interaction of Powerful Ultrashort Laser Pulses. United States: Department of Energy.Google Scholar
Lin, Z., Zhigilei, L.V. & Celli, V. (2008). Electron-phonon coupling and electron heat capacity of metals under conditions of strong electron-phonon nonequilibrium. Phys. Rev. B 77, 075133.Google Scholar
M. Polek, K.A. & Hassanein, A. (2015). Fluence dependence on ablation regimes during ultrafast laser interaction with copper. J. Phys. D: Appl. Phys.Google Scholar
Martin, W.C. & Zalubas, R. (1983). Energy levels of silicon, Si I through Si XIV. J. Phys. Chem. Ref. Data 12, 323–380.CrossRefGoogle Scholar
Pierret, R.F. & Neudeck, G.W. (1987). Advanced Semiconductor Fundamentals. MA: Addison-Wesley Reading.Google Scholar
Riley, D., Langley, A., Taday, P., Shaikh, W. & Mccormack, I. (1998). Reflectivity experiments with 60 femtosecond laser pulses. J. Phys. D: Appl. Phys. 31, 515.Google Scholar
Sokolowski-Tinten, K., Bialkowski, J. & Von Der Linde, D. (1995). Ultrafast laser-induced order-disorder transitions in semiconductors. Phys. Rev. B 51, 14186.Google Scholar
Sokolowski-Tinten, K. & Von Der Linde, D. (2000). Generation of dense electron-hole plasmas in silicon. Phys. Rev. B 61, 2643.Google Scholar
Van Driel, H.M. (1987). Kinetics of high-density plasmas generated in Si by 1.06-and 0.53-μm picosecond laser pulses. Phys. Rev. B 35, 8166.Google Scholar
Vonderlinde, D., Sokolowskitinten, K. & Bialkowski, J. (1997). Laser-solid interaction in the femtosecond time regime. Appl. Surf. Sci. 109, 1–10.Google Scholar