Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-04T21:06:07.368Z Has data issue: false hasContentIssue false

Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites

Published online by Cambridge University Press:  28 February 2007

J. WOŁOWSKI
Affiliation:
Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland
J. BADZIAK
Affiliation:
Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland
A. CZARNECKA
Affiliation:
Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland
P. PARYS
Affiliation:
Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland
M. PISAREK
Affiliation:
Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw, Poland
M. ROSIŃSKI
Affiliation:
Institute of Plasma Physics and Laser Microfusion, Warsaw, Poland
R. TURAN
Affiliation:
Middle East Technical University, Ankara, Turkey
S. YERCI
Affiliation:
Middle East Technical University, Ankara, Turkey

Abstract

This work describes the application of laser ion source (LIS) for fabrication of semiconductor nanostructures, as well as relevant equipment completed and tested in the IPPLM for the EU STREP “SEMINANO” project and the obtained experimental results. A repetitive pulse laser system of parameters: energy of ∼0.8 J in a 3.5 ns-pulse, wavelength of 1.06 μm, repetition rate of up to 10 Hz and intensity on the target of up to 1011 W/cm2, has been employed to produce Ge ions intended for ion implantation into SiO2 substrate. Simultaneously, laser-ablated material (atoms clusters debris) was deposited on the substrate surface. The parameters of the Ge ion streams (energy and angular distributions, charge states, and ion current densities) were measured with the use of several ion collectors and an electrostatic ion energy analyzer. The SiO2 films of thickness from 20–400 nm prepared on substrates of a single Si crystal were deposited and implanted with the use of laser-produced germanium of different properties. The modified SiO2 layers and sample surface properties were characterized with the use of different methods: X-ray photoelectron and Auger electron spectroscopy (XPS+AES), Raman scattering spectroscopy (RSS) and scanning electron microscopy (SEM). The production of the Ge nano-crystallites has been demonstrated for annealed samples prepared in different experimental conditions.

Type
Research Article
Copyright
© 2007 Cambridge University Press

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Boody, F.P., Höpfl, R., Hora, H. & Kelly, C.J. (1996). Laser-driven ion source for reduced-cost implantation of metal ions for strong reduction of dry friction and increased durability: Laser-Ion Sources. Laser Part. Beams 14, 443.Google Scholar
Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Liu, M.H., Dai, D.Y. & Song, W.D. (2003). The mechanisms of photoluminescence from silicon nano-crystals formed by pulsed-laser deposition in argon and oxygen ambient. J. App. Phys. 93, 6311.Google Scholar
Eliezer, S., Eliaz, N., Grossman, E., Fisher, D., Gouzman, I., Henis, Z., Pecker, S., Horovitz, Y., Fraenkel, M., Maman, S., Ezersky, V. & Eliezer, D. (2005). Nanoparticles and nanotubes induced by femtosecond lasers. Laser Part. Beams 23, 1519.Google Scholar
Fernandez, J.C., Hegelich, B.M., Cobble, J.A., Flippo, K.A., Letzring, S.A., Johnson, R.P., Gautier, D.C., Shimada, T., Kyrala, G.A., Wang, Y.Q., Wetteland, C.J. & Schreiber, J. (2005). Laser-ablation treatment of short-pulse laser targets: Toward an experimental program on energetic-ion interactions with dense plasmas. Laser Part. Beams 23, 267273.Google Scholar
Láska, L., Krása, J., Maśek, K., Pfeifer, M., Králiková, B., Mocek, T., Skála, J., Straka, P., Trenda, P., Rohlena, K., Woryna E., Farny, J., Parys, P., Wołowski, J., Mróz, W., Shumshurov, A., Sharkov, B., Collier, J., Langbein, K., &Haseroth, H. (1996). Iodine laser production of highly charged Ta ions. Czech. J. Phys. 46, 10991115.Google Scholar
Láska, L., Juha, L., Krása, J., Maśek, K., Pfeifer, M., Rohlena, K., Králiková, B., Skála, J., Peřina, V., Hnatowicz, V., Woryna, E., Wołowski, J., Parys, P., Boody, F.P., Höpfl, R. & Hora, H. (2000). Laser induced direct implantation of ions. Czech. J. Phys. 50, 8190.Google Scholar
Masuda, K., Yamamoto, M., Kanaya, M. & Kanemitsu, Y. (2002). Fabrication of Ge nano-crystals in SiO2 films by ion implantation: Control of size and position. J. Non-Cryst. Solids 299–300, 10791083.Google Scholar
Qi, B., Gilgenbach, R.M., Lau, Y.Y., Johnston, M.D., Lian, J., Wang, L.M., Doll, G.L. & Lazarides, A. (2001). Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si. Appl. Phys. Lett. 78, 37853788.Google Scholar
Rosiński, M., Badziak, J., Boody, F.P., Gammino, S., Hora, L., Krása, J., Láska, L., Mezzasalma, A.M., Parys, P., Rohlena, K., Torrisi, L., Ullschmied, J., Wołowski, J. & Woryna, E. (2005). Application of laser ion source for ion implantation technology. Vacuum 78, 435438.Google Scholar
Thareja, R.K. & Sharma, A.K. (2006). Reactive pulsed laser ablation: Plasma studies. Laser Part. Beams 24, 311320.Google Scholar
Torrisi, L., Gammino, S., Picciotto, A., Wołowski, J., Krása, J., Láska, L., Calcagnile, L. & Quarta, G. (2005). RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS. Rad. Effects & Defects Solids 160, 685695.Google Scholar
Trusso, S., Barletta, E., Barreca, F., Fazio, E. & Neri, F. (2005). Time resolved imaging studies of the plasma produced by laser ablation of silicon in O2/Ar atmosphere. Laser Part. Beams 23, 149153.Google Scholar
Veiko, V.P., Shakhno, E.A., Smirnov, V.N., Miaskovski, A.M. & Nikishin, G.D. (2006). Laser-induced film deposition by LIFT: Physical mechanisms and applications. Laser Part. Beams 24, 203209.Google Scholar
Wieger, V., Strassl, M. & Wintner, E. (2006). Pico- and microsecond laser ablation of dental restorative materials. Laser Part. Beams 24, 4145.Google Scholar
Wołowski, J., Badziak, J., Boody, F.P., Gammino, S., Hora, H., Jungwirth, K., Krása, J., Láska, L., Parys, P., Pfeifer, M., Rohlena, K., Szydlowski, A., Torrisi, L., Ullschmied, J. & Woryna, E. (2003). Characteristics of ion emission from plasma produced by high-energy short-wavelength (438 nm) laser radiation. Plasma Phys. Contr. Fusion 45, 108793.Google Scholar
Wołowski, J., Badziak, J., Czarnecka, A., Boody, F.P., Gammino, S., Krása, J., Láska, L., Mezzasalma, A., Parys, P., Rosiński, M., Rohlena, K., Torrisi, L. & Ullschmied, J. (2005). Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials. Rad. Effects & Defects Solids 160, 477482.Google Scholar
Woryna, E., Wołowski, J., Králiková, B., Krása, J., Láska, L., Pfeifer, M., Rohlena, K., Skála, J., Perina, V., Boody, F.P., Höpfl, R. & Hora, H. (2000). Laser produced Ag ions for direct implantation. Rev. Sci. Instrum. 71, 949951.Google Scholar
Woryna, E., Parys, P., Wołowski, J. & Mróz, W. (1996). Corpuscular diagnostics and processing methods applied in investigations of laser-produced plasma as a source of highly ionized ions. Laser Part. Beams 14, 293321.Google Scholar
Wu, X.L., Gao, T., Bao, X.M., Yan, F., Jiang S.S., &Feng, D. (1997). Annealing temperature dependence of Raman scattering in Ge + -implanted SiO2 films. J. Appl. Phys. 82, 2704.Google Scholar