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Amorphous hydrogenated carbon films deposited by a closed-drift ion source

Published online by Cambridge University Press:  21 August 2003

SERGEI P. BUGAEV ,
HUI-GON CHUN ,
NIKOLAY S. SOCHUGOV ,
KONSTANTIN V. OSKOMOV  and
ALEXANDER N. ZAKHAROV
SERGEI P. BUGAEV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
HUI-GON CHUN
Affiliation:
School of Materials Science and Engineering, Research Center for Machine Parts and Materials Processing, University of Ulsan, Ulsan, Korea
NIKOLAY S. SOCHUGOV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
KONSTANTIN V. OSKOMOV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
ALEXANDER N. ZAKHAROV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
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Abstract

The general possibility of the extended (∼30 cm) closed-drift ion source application for deposition of wear-resistant amorphous hydrogenated carbon (a-C:H) films on large-area dielectric substrates, in particular, on carbon-fiber plastic, is shown. Parameters of the “ion” and the “plasma” regimes of the ion source operation in argon and methane are defined. It is shown that the ion current nonuniformity is in the range of ±5–15% depending on the operation mode. Optimum conditions for the substrate precleaning in argon and hard, well-adhered a-C:H films deposition from methane are determined. The films are characterized by high hardness (∼11 GPa) and low surface roughness (∼0.13 nm) that leads to a several times lower friction coefficient (0.05) and wear rate (0.001 μm3m−1N−1) compared to glass and carbon-fiber plastic substrates.

Keywords

a-C:H filmsClosed-drift ion sourcePlastic substratesWear resistance
Type
Research Article
Information
Laser and Particle Beams , Volume 21 , Issue 2 , April 2003 , pp. 285 - 289
Copyright
© 2003 Cambridge University Press

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