Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T20:10:38.861Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal and Electrical Characterization of Power Mosfet Module Using Coupled Field Analysis

Published online by Cambridge University Press:  18 September 2019

H.-C. Cheng Open the ORCID record for H.-C. Cheng [Opens in a new window] ,
C.-H. Wu  and
S.-Y. Lin
H.-C. Cheng*
Affiliation:
Department of Aerospace and Systems EngineeringFeng Chia University Taichung, Taiwan, ROC
C.-H. Wu
Affiliation:
Department of Aerospace and Systems EngineeringFeng Chia University Taichung, Taiwan, ROC
S.-Y. Lin
Affiliation:
Department of Aerospace and Systems EngineeringFeng Chia University Taichung, Taiwan, ROC
*
*Corresponding author ([email protected])
Get access

Abstract

Temperature resulting from the joule heating power and the turn-on and turn-off dissipation of high-power, high-frequency applications is the root cause of their thermal instability, electrical performance degradation, and even thermal-fatigue failure. Thus, the study presents thermal and electrical characterizations of the power MOSFET module packaged in SOT-227 under natural convection and forced convection through three-dimensional (3D) thermal-electric (TE) coupled field analysis. In addition, the influences of some key parameters like electric loads, ambient conditions, thermal management considerations (heat sink, heat spreader) and operation conditions (duty cycle and switching frequency) on the power loss and thermal performance of the power module are addressed. The study starts from a suitable estimation of the power losses, where the conduction losses are calculated using the temperature- and gate-voltage-dependent on-state resistance and drain current through the device, and the switching losses are predicted based on the ideal switching waveforms of the power MOSFETs applied. The effectiveness of the theoretical predictions in terms of device’s power losses and temperatures is demonstrated through comparison with the results of circuit simulation and thermal experiment.

Keywords

Power MOSFETThermal PerformancePower Loss EstimationCoupled Thermal-electric AnalysisNatural and Forced Convection
Type
Research Article
Information
Journal of Mechanics , Volume 35 , Issue 5 , October 2019 , pp. 641 - 655
Copyright
© The Society of Theoretical and Applied Mechanics 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Liao, L. L. and Chiang, K. N., “Nonlinear and Temperature-Dependent Material Properties of AU/SN Alloy for Power Module,” Journal of Mechanics, Vol. 33, No. 5, 2017, pp. 663-672.CrossRefGoogle Scholar
Li, J., Yaqub, I., Corfield, M., and Johnson, C. M., “Interconnect Materials Enabling IGBT Modules to Achieve Stable Short-Circuit Failure Behavior,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 7, No. 5, 2017, pp. 734-744.Google Scholar
Yerasimou, Y., Pickert, V., Ji, B., and Song, X., “Liquid Metal Magnetohydrodynamic Pump for Junction Temperature Control of Power Modules,” IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 33, No. 12, 2018, pp. 10583-10593.Google Scholar
Jayant Baliga, B., Fundamentals of power semiconductor devices, Springer, 2010.Google Scholar
Wang, H., “Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters,” Doctoral dissertation in Department of Electrical Engineering, the Virginia Polytechnic Institute and State University, USA, 2007.Google Scholar
Neudeck, P. G., Okojie, R. S., and Chen, L.-Y., “High-Temperature Electronics—A Role for Wide Bandgap Semiconductors?,” Proceedings of the IEEE, Vol. 90, No. 6, JUNE 2002, pp. 1065-1076.CrossRefGoogle Scholar
Sze, S. M., Physics of Semiconductor Devices, 2nd ed., New York: Wiley, 1981.Google Scholar
Hudgins, J. L., Simin, G. S., Santi, E. and Khan, M. A., “An assessment of wide bandgap semiconductors for power devices,” IEEE Transactions on Power Electronics, Vol.18, No.3, 2003, pp. 907 - 914CrossRefGoogle Scholar
Su, Y. F., Steven, Y. Liang and Chiang, K. N., “Design and Reliability Assessment of Novel 3D-ICPackaging,” Journal of Mechanics, Vol. 33, No. 2, 2017, pp. 193-203.CrossRefGoogle Scholar
Yamada, Y., Takaku, Y., Yagi, Y., Nakagawa, I., Atsumi, T., Shirai, M., Ohnuma, I., Ishida, K., “Reliability of wire-bonding and solder joint for high temperature of power semiconductor device,” Microelectronics Reliability, vol. 47, no. 12, 2007, pp. 2147–2151.CrossRefGoogle Scholar
Shanmuga, A. S. and Velraj, R., “Thermal management of electronics: A review of literature,” Thermal Science, Vol. 12, No. 2, pp. 5-26, Feb. 2008.Google Scholar
Military Standardization Handbook, MIL-HDBK-217C, Reliability Prediction of Electronic Equipment, US Department of Defense, May, 1980.Google Scholar
Fabis, P. M. and Shum, D., “Thermal modeling of diamond-based power electronics packaging,” In Proc. 15th IEEE Semiconductor Thermal Measurement and Managament Symposium, San Diego, CA, Mar. 1999, pp. 98-104.Google Scholar
Chou, P. C. and Cheng, S., “Design and characterization of a 200 V, 45 A all-GaN HEMT-based power module,” Applied Thermal Engineering, Vol. 61, 2013, pp. 20–27.CrossRefGoogle Scholar
Iwasaki, H., Hisano, K., and Takamatsu, T. “Thermal Problem of Next Generation Semiconductor Power Devices,” 2003, JSME annual meeting, Vol. 6, 2003, pp. 251-252.CrossRefGoogle Scholar
Ye, J., Yang, K., Ye, H., and Emadi, A., “A Fast Electro-Thermal Model of Traction Inverters for Electrified Vehicles,” IEEE Transactions on Power Electronics, Vol. 32, No. 5, 2017, pp. 3920-3934.CrossRefGoogle Scholar
Kibushi, R., Hatakeyama, T., Nakagawa, S., and Ishizuka, M., “Analysis of hot spot temperature in power Si MOSFET with electro-thermal analysis,” 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), Taipei, Taiwan, 2013, pp. 211-213.CrossRefGoogle Scholar
Chou, P.-C., Cheng, S., and Chen, S.-H., “Evaluation of thermal performance of all-GaN power module in parallel operation,” Applied Thermal Engineering, Vol. 70, No. 1, 2014, pp. 593-599.CrossRefGoogle Scholar
Bouzida, A., Abdelli, R., M’hamed, O., “Calculation of IGBT power losses and junction temperature in inverter drive, Proceeding of 8th International Conference on Modelling, Identification and Control (ICMIC), Algiers, Algeria, Nov. 2016, pp. 768-773.CrossRefGoogle Scholar
Liao, L. L., Huang, T. Y., Liu, C. K., Li, W., Dai, M. J., and Chiang, K. N., “Electro-thermal finite element analysis and verification of power module with aluminum wire”, Microelectronic Engineering, Vol. 120, 2014, pp. 114–120.CrossRefGoogle Scholar
Baliga, B. J.. Fundamentals of Power Semiconductor Devices. Springer US, 2010.Google Scholar
Brown, J., “Power MOSFET Basics: Understanding Gate Charge and Using it to Assess Switching Performance,” Application Note AN608, Vishay Siliconix, December, 2004.Google Scholar
Antonova, E. E. and Looman, D. C., “Finite Elements for Thermoelectric Device Analysis in ANSYS,” proceedings of 2005 International Conference on Thermoelectrics, June 19-23, 2005, pp. 200-203.CrossRefGoogle Scholar
Ellison, G. N., Thermal Computations for Electronic Equipment, Van Nostrand Reinhole Company, New York. 1989.Google Scholar
EIA/JEDEC Standard, Integrated circuits thermal test method environment conditions-natural convection (still air)(EIA/JESD51-2), 1995.Google Scholar
Cheng, H.-C., Huang, T.-C., Hwang, P.-W. and Chen, W.-H., “Heat Dissipation Assessment of Through Silicon Via (TSV)-based 3D IC packaging for CMOS image sensing,” Microelectronics Reliability, Vol. 59, 2016, pp. 84-94.CrossRefGoogle Scholar
Blech, A. and Sello, J., “Critical length in electromigration-experiments and theory,” in: Presented at the 4th International Workshop on Stress Induced Phenomena in Metallization, Tokyo, Japan,1997.CrossRefGoogle Scholar