Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-03T13:01:28.323Z Has data issue: false hasContentIssue false

A Method Integrating Optimal Algorithm and FEM on CMOS Residual Stress

Published online by Cambridge University Press:  08 August 2013

W. C. Chuang
Affiliation:
Department of Mechanical and Electro-mechanical Engin eering, National Sun Yat-sen University, Kaoshiung, Taiwan 80424, R.O.C.
David T. W. Lin*
Affiliation:
Institute of Mechatronic System Engineering, National University of TainanTainan, Taiwan 70005, R.O.C.
Y.-C. Hu
Affiliation:
Department of Mechanical and Electromechanical Engineering, National ILan University, ILan, Taiwan 26047, R.O.C.
H.-L. Lee
Affiliation:
MicroSystems Technology Center, Industrial Technology Research Institute, Tainan, Taiwan 70955, R.O.C.
C.-H. Cheng
Affiliation:
Department of Aeronautics and Astronautics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
P.-Z. Chang
Affiliation:
Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan 10617, R.O.C.
N. B. Quyen
Affiliation:
Institute of Mechatronic System Engineering, National University of Tainan, Tainan, Taiwan 70005, R.O.C.
Get access

Abstract

Residual stress in MEMS is of inherent importance in various respects. This study proposes a specific method using ANSYS including the birth and death method and combined with the optimal method (SCGM) to reduce the residual stresses during the CMOS fabrication process. The suitable cooling temperature for decreasing the residual stress is proposed and available. It demonstrates that the suitable parameter on the fabrication can reduce the residual stress in MEMS devices without any extra manufacturing process or external apparatus. The proposed method can expand to simulate the realistic MEMS model effectively.

Type
Research Article
Copyright
Copyright © The Society of Theoretical and Applied Mechanics, R.O.C. 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Fujiwara, H., Abe, T. and Tanaka, K., Residual stresses III, Elsevier Applied Science, London (1992).Google Scholar
2.Kusaka, K., Hanabusa, T., Nishida, M. and Inoko, F., “Residual Stress and In-Situ Thermal Stress Measurement of Aluminum Film Deposited on Silicon Wafer,” Thin Solid Films, 290–291, pp. 248253 (1996).CrossRefGoogle Scholar
3.Rai, J. K. and Xirouchakis, P., “Finite Element Method Based Machining Simulation Environment for Analyzing Part Errors Induced During Milling of Thin-Walled Components,” International Journal of Machine Tools & Manufacture, 48, pp. 629643 (2008).Google Scholar
4.Capriccioli, A. and Frosi, P., “Multipurpose ANSYS FE Procedure for Welding Processes Simulation,” Fusion Engineering and Design, 84, pp. 546553 (2009).Google Scholar
5.Cheng, C. H. and Chang, M. H., “A Simplified Conjugate-Gradient Method for Shape Identification Based on Thermal Data,” Numerical Heat Transfer Part B-Fundamentals, 43, pp. 489507 (2003).Google Scholar
6.Pawlowski, L., The Science and Engineering of Thermal Spray Coatings, Wiley, Chichester (1995).Google Scholar
7.ITRI, The Design of High Sensitivity CMOS Compatible Acoustic Sensing Devices, Industrial Technology Research Institute / MicroSystems Technology Center (2008).Google Scholar
8.Chuang, W. C., Lee, H. L., Hu, Y. C., Shih, W. P. and Chang, P. Z., “Electromechanical Coupling of CMOS-MEMS Testkey for Extracting Material Properties,” The First IFToMM Asian Conference on Mechanism and Machine Science, Taipei (2010).Google Scholar
9.Conrad, H., Klose, T., Sandner, T., Jung, D., Schenk, H. and Lakner, H., “Modeling the Thermally Induced Curvature of Multilayer Coatings with COMSOL Multiphysics,” COMSOL Conference 2008, Hannover (2008).Google Scholar
10.Hsieh, J.-C., Lin, David T. W. and Cheng, C.-H., “Optimization of Thermal Management by Integration of an SCGM, a Finite-Element Method, and an Experiment on a High-Power LED Array,” IEEE Transactions on Electron Devices, 58, pp. 11411148 (2011).Google Scholar