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X-ray reflectivity study of solution-deposited ZrO2 thin films on self-assembled monolayers: Growth, interface properties, and thermal densification

Published online by Cambridge University Press:  31 January 2011

K. A. Ritley ,
K-P. Just ,
F. Schreiber ,
H. Dosch ,
T. P. Niesen  and
F. Aldinger
K. A. Ritley
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D-70569 and Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550, Stuttgart, Germany
K-P. Just
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D-70569 and Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550, Stuttgart, Germany
F. Schreiber*
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D-70569 and Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550, Stuttgart, Germany
H. Dosch
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D-70569 and Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550, Stuttgart, Germany
T. P. Niesen
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Nichtmetallische Anorganische Materialien, Pulvermetallurgisches Laboratorium, Heisenbergstrasse 5, D-70569 Stuttgart, Germany
F. Aldinger
Affiliation:
Max-Planck-Institut für Metallforschung and Institut für Nichtmetallische Anorganische Materialien, Pulvermetallurgisches Laboratorium, Heisenbergstrasse 5, D-70569 Stuttgart, Germany
*
a)Address all correspondence to this author.[email protected]
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Abstract

Thin films of ZrO2 were deposited from aqueous solution on Si(100) substrates precovered by functionalized alkyltrichlorosilane self-assembled monolayers (SAMs). The interface structure, thermal stability, and densification of these films in the temperature range from room temperature to 750 °C in vacuum were measured using in situ x-ray reflectivity. The growth rate is a nonlinear function of time in solution, with a pronounced nonuniformity during the first 30 min. The as-deposited films exhibit about 3-nm roughness and a density below that of bulk ZrO2. Measurements in vacuum reveal decreasing film thickness, increasing film density, and decreasing roughness upon annealing up to 750 °C. The densification saturates at the highest measured temperatures, presumably following evaporation of residual contaminants from the aqueous synthesis procedure. Above 200 °C the SAM/ZrO2 interface began to deteriorate, possibly due to interdiffusion. The ZrO2 film structure obtained at the highest annealing temperatures persisted upon cooling to room temperature, and there was no visible evidence of stress-induced microstructural changes, such as peeling or cracking.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2706 - 2713
Copyright
Copyright © Materials Research Society 2000

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