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X-ray photoelectron spectroscopy studies of silicon suboxides obtained by the sol-gel method

Published online by Cambridge University Press:  31 January 2011

S. Santucci ,
E. Cordeschi ,
L. Lozzi ,
M. Passacantando ,
P. Picozzi  and
L. Mancinelli degli Esposti
S. Santucci*
Affiliation:
Dipartimento di Fisica Universitá dell'Aquila, INFM Unitá dell'Aquila, 67010, Coppito (AQ), Italy
E. Cordeschi
Affiliation:
Dipartimento di Fisica Universitá dell'Aquila, INFM Unitá dell'Aquila, 67010, Coppito (AQ), Italy
L. Lozzi
Affiliation:
Dipartimento di Fisica Universitá dell'Aquila, INFM Unitá dell'Aquila, 67010, Coppito (AQ), Italy
M. Passacantando
Affiliation:
Dipartimento di Fisica Universitá dell'Aquila, INFM Unitá dell'Aquila, 67010, Coppito (AQ), Italy
P. Picozzi
Affiliation:
Dipartimento di Fisica Universitá dell'Aquila, INFM Unitá dell'Aquila, 67010, Coppito (AQ), Italy
L. Mancinelli degli Esposti
Affiliation:
ISRIM, 05100, Terni, Italy
*
a)Address all correspondence to this author.
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Abstract

Silicon suboxides thin films obtained by sol-gel and dip-coating methods, starting from a sol containing different percentages of TEOS (tetraethoxysilane) and MTEOS (methyltriethoxysilane), were grown onto silicon substrates. The samples were annealed at 100, 300, and 500 °C, and the electronic and compositional properties of the surface were studied by x-ray photoelectron spectroscopy (XPS) detecting the Si “Auger parameter” and the valence band. The effects produced by an ion-sputtering treatment of the samples were also studied.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 1 , January 1997 , pp. 100 - 105
Copyright
Copyright © Materials Research Society 1997

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References

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