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Voids in Silicon by He Implantation: From Basic to Applications

Published online by Cambridge University Press:  31 January 2011

V. Raineri ,
M. Saggio  and
E. Rimini
V. Raineri
Affiliation:
CNR IMETEM, I 95121 Catania, Italy
M. Saggio
Affiliation:
STMicroelectronics95121 Catania, Italy
E. Rimini
Affiliation:
INFM and Dipartimento di Fisica dell'Universita‘, I 95129 Catania, Italy
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Abstract

The mechanism of bubble formation when He is implanted into silicon is described. Many experiments are reviewed and several techniques are considered. During implantation and subsequent annealing, complex Hen–Vm clusters are formed, trapping vacancies, while Si self-interstitials recombine directly at the surface. By increasing temperature He atoms out-diffuse, and the entire process produces a supersaturation of vacancies (void formation). Their evolution is studied during isothermal and isochronal annealing, describing the mechanisms involved; that is, direct coalescence or Ostwald ripening. The internal surface is an efficient trap for self-interstitials and for metals. The gettering mechanism is governed by a surface adsorption at low impurity concentration while at high value a silicide phase is observed. The high getter capability is ensured by the large number of traps introduced (1017–1019 cm−3). Finally, voids introduce mid gap energy levels that act as minority carrier recombination centers, providing a powerful method to control lifetime locally in silicon devices. The reviewed results demonstrate that the trap levels are due to the dangling bonds present on the void surface. This property can be used in many applications.

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 15 , Issue 7 , July 2000 , pp. 1449 - 1477
Copyright
Copyright © Materials Research Society 2000

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