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Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

Published online by Cambridge University Press:  31 January 2011

N. W. Cody ,
U. Sudarsan  and
R. Solanki
N. W. Cody
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverum. Oregon 97006
U. Sudarsan
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverum. Oregon 97006
R. Solanki
Affiliation:
Department of Applied Physics and Electrical Engineering, Oregon Graduate Center, Beaverum. Oregon 97006
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Abstract

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1144 - 1150
Copyright
Copyright © Materials Research Society 1988

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References

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