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Ultraviolet laser-induced formation of thin silicon oxide film from the precursor β-chloroethyl silsesquioxane

Published online by Cambridge University Press:  31 January 2011

Jaya Sharma ,
Donald H. Berry ,
Russell J. Composto  and
Hai-Lung Dai
Jaya Sharma
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Donald H. Berry
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Russell J. Composto
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
Hai-Lung Dai
Affiliation:
Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202
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Abstract

Formation of silicon oxide thin films from spin-coated β-chloroethyl silsesquioxane (β-cesq) on silicon, NaCl, and quartz was induced by 193 nm laser pulses. The silicon oxide deposition is characterized by ir, uv, ellipsometry, and Rutherford backscattering spectrometry. The silicon oxide films obtained by uv irradiation were found to have much less carbon and chlorine as impurities and have a higher refractive index as compared to those obtained by annealing. The photoinduced oxide films were found to be smooth, without laser-induced microrough or periodic structures.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 990 - 994
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Gupta, S. K. and Chin, R. L., in ACS Symposium Series, 295, Washington, DC, 1986.Google Scholar
2.Inoue, K., Michimori, M., Okuyama, M., and Hamakawa, Y., Jpn. J. Appl. Phys. 26, 805 (1987).CrossRefGoogle Scholar
3.Toyoda, Y., Inoue, K., Okuyama, M., and Hamakawa, Y., Jpn. J. Appl. Phys. 26, 835 (1987).CrossRefGoogle Scholar
4.Marks, J. and Robertson, R. E., Appl. Phys. Lett. 52, 810 (1988).CrossRefGoogle Scholar
5.Gonzalez, P., Fernandez, D., Pou, J., Garcia, E., Serra, J., Leon, B., and Perez-Amor, M., Thin Solid Films 218, 170 (1992).CrossRefGoogle Scholar
6.Niwano, M., Hirano, S., Suemitsu, M., Honma, K., and Miyamoto, N., Jpn. J. Appl. Phys. 28, L1310 (1989).CrossRefGoogle Scholar
7.Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. B. and Hubler, G. K. (John Wiley & Sons, Inc., New York, 1994).Google Scholar
8.Muisener, R. J. and Koberstein, J. T., Polym. Mater. Sci. Eng. 77, 653 (1997).Google Scholar
9. (a)Figge, L.K., Ph.D. Dissertation, University of Pennsylvania (1996);Google Scholar
(b)Arkles, B., Berry, D. H., Figge, L. K., Composto, R. J., Chiou, T., Colazzo, H., and Wallace, W. E., Sol-Gel Sci. Technol. 8, 465 (1997).Google Scholar
10.McCrackin, F. L., A Fortran Program for Analysis of Ellipsometer Measurements (Natl. Bur. Stand. Tech. Note 479, 1969).CrossRefGoogle Scholar
11.Leavitt, J. A., McIntyre, L. C. Jr, Stoss, P., Order, J.G., Ashbaugh, M. D., Dezfouly-Arjomandy, B., Yang, Z-M., and Lin, Z., Nucl. Instrum. Methods B40/41, 776–779 (1989). Laboratory cross section is the measured cross section for 170.5± backscattering of 4He ions incident on a carbon target. Rutherford cross section is the theoretical cross section based on a Coulomb interaction potential between the incident particle and target atom.CrossRefGoogle Scholar
12.Fogarassy, E., Fudes, C., Slaoui, A., De Unamuno, S., Stoquert, J.P., and Lang, B., J. Appl. Phys. 76, 2612 (1994).CrossRefGoogle Scholar
13.Sharma, J. and Dai, H. L., unpublished results.Google Scholar