Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T04:40:37.506Z Has data issue: false hasContentIssue false

Tunability of the dielectric constant of Ba0.1Sr0.9TiO3 ceramics in the paraelectric state

Published online by Cambridge University Press:  03 March 2011

Abdelkader Outzourhit
Affiliation:
Department of Physics, Colorado School of Mines, Golden, Colorado 80401–1887
John U. Trefny
Affiliation:
Department of Physics, Colorado School of Mines, Golden, Colorado 80401–1887
Tomoko Kito
Affiliation:
Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401–1887
Baki Yarar
Affiliation:
Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401–1887
Get access

Abstract

Ba1−xSrxTiO3 (x = 0.9) ferroelectric ceramics were prepared successfully using a new wet technique and their structure and dielectric properties compared with those synthesized by the solid-state reaction method. The voltage dependence of the dielectric constant in the paraelectric phase was examined. It was found that the dielectric constants of these materials, prepared by both methods, exhibit large changes with applied voltage in the paraelectric phase. Tunability (the percentage change of the dielectric constant from its zero-bias value in the presence of a de-biasing electric field) was observed to exceed 30% at only 1.7 kV/cm at 77 K in the samples prepared by the solid-state reaction method. The tunability was found to decrease dramatically as the operating temperatures increased above the Curie point. These observations are interpreted in light of an existing phenomenological theory. The dependence of the dielectric constant in the paraelectric state upon a de-biasing electric field is also demonstrated as a potential method for the characterization of dielectric nonuniformities in ferroelectric ceramics.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Swartz, S. L., in Conference on Electrical Insulation and Dielectric Phenomena; Digest of Literature on Dielectrics, IEEE Trans. Elect. Insul. 25, 935 (1990).Google Scholar
2Sheppard, L. M., Ceram. Bull. 71, 85 (1992).Google Scholar
3Hermann, A. M., Price, J. C., Scott, J. F., Yandrofski, R. M., Naziripour, A., Gait, D., Duan, H. M., Paranthaman, M., Tello, R., Cuchiaro, J., and Ahrenkiel, R. K., Bull. Am. Phys. Soc. 38, 689 (1993).Google Scholar
4Gait, D., Price, J. C., Beall, J. A., and Ono, R. H., Appl. Phys. Lett. 63, 3078 (1993).Google Scholar
5Outzourhit, A., Trefny, J. U., Kito, T., Yarar, B., Nazirpour, A., and Hermann, A. M., Fabrication and Characterization of Ba1–xSrxTiO3 Tunable Thin Film Capacitors, Thin Solid Films (in press).Google Scholar
6Rushman, D. F. and Strivens, A. M., Trans. Faraday Soc. 42A, 231 (1946).CrossRefGoogle Scholar
7Durst, G., Grotenhuis, M., and Barkow, A. G., J. Am. Ceram. Soc. 33, 133 (1950).CrossRefGoogle Scholar
8Mcquarrie, M. C., Ceram. Bull. 34, 295 (1955).Google Scholar
9Basamjian, J. A. and DeVries, R. C., J. Am. Ceram. Soc. 40, 3735 (1957).Google Scholar
10Saymaprasad, U., Galgali, R. K., and Mohanty, B. C., Mater. Lett. 7, 197 (1988).CrossRefGoogle Scholar
11Herner, S. B., Selmi, F. A., Varadan, V. V., and Varadan, V. K., Mater. Lett. 15, 317 (1993).CrossRefGoogle Scholar
12Lin, C. H., Yan, T. S., and Chin, T. S., in Synthesis and Processing of Ceramics: Scientific Issues, edited by Rhine, W. E., Shaw, T. M., Gottschall, R. J., and Chen, Y. (Mater. Res. Soc. Symp. Proc. 249, Pittsburgh, PA, 1992), p. 101.Google Scholar
13Deb, K. K., Hill, M. D., and Kelly, J. F., J. Mater. Res. 7, 3296 (1992).CrossRefGoogle Scholar
14Hennings, D., Klee, M., and Waser, R., Adv. Mater. 3, 334 (1991).CrossRefGoogle Scholar
15Rupprecht, G. and Bell, R. O., Phys. Rev. 125, 1915 (1962).CrossRefGoogle Scholar
16Devonshire, A. F., Philos. Mag. 40, 1040 (1949).CrossRefGoogle Scholar
17Johnson, K. M., J. Appl. Phys. 33, 2826 (1961).CrossRefGoogle Scholar
18Grossman, D. G. and Isard, J. O., J. Phys. D: Appl. Phys. 3, 1058 (1970).CrossRefGoogle Scholar