Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-22T22:41:17.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Trapping levels in hydrothermal and solution grown bismuth titanium oxide

Published online by Cambridge University Press:  31 January 2011

D. Eirug Davies  and
M. T. Harris
D. Eirug Davies
Affiliation:
Rome Laboratory, Hanscom Air Force Base, Massachusetts 01731
M. T. Harris
Affiliation:
Rome Laboratory, Hanscom Air Force Base, Massachusetts 01731
Get access

Abstract

Deep trapping levels in Bi12TiO20 obtained by top seeded solution growth and by the hydrothermal technique have been compared. This was undertaken as such levels directly influence the photorefractive behavior of the material. It is found that the most predominant of the peaks revealed by thermally stimulated conductivity measurements represents two rather than a single defect level and that the deeper of the two becomes more significant in hydrothermally grown material. One defect found in the solution pulled material is notably absent from that produced hydrothermally. The consequence of adding phosphorus doping and the manner in which it affects the deep levels has also been examined.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 308 - 310
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Arizmendi, L., Cabrera, J. M., and Agullo-Lopez, F., Int. J. Optoelectronics 7, 149 (1992).Google Scholar
2.Bruton, T. M., Brice, J. C., Hill, O. F., and Whiffin, P. A. C., J. Cryst. Growth 23, 21 (1974).CrossRefGoogle Scholar
3.Larkin, J. J., Harris, M., Cormier, J. E., and Armington, A., J. Cryst. Growth 128, 871 (1993).CrossRefGoogle Scholar
4.Davies, D. E. and Larkin, J. J., Appl. Phys. Lett. 67, 188 (1995).CrossRefGoogle Scholar