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Transport-reaction controlled chemical vapor deposition of epitaxial Si(1–x)Gex thin films and thermodynamic equilibrium composition

Published online by Cambridge University Press:  18 February 2016

H. Kühne  and
H. Richter
H. Kühne
Affiliation:
Institut für Halbleiterphysik, O-1200 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institut für Halbleiterphysik, O-1200 Frankfurt (Oder), Germany
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Extract

Comparing experimental CVD Si(1–x)Gex, thin film data of different authors with independently published results of thermodynamic equilibrium calculations leads to the conclusion that thermodynamically calculated compositions of thin films do not fit the experimentally obtained data. Further it will be shown in the paper that the discussed experimental data of Si(1–x)Gex layer composition can be uniquely interpreted by applying a transport-reaction controlled mechanism, which includes the hypothetical formation of silicon atoms containing intermediates of the germanium source compound as well as the germanium atoms forming chemical reaction to be of first order.

Type
Research Article
Information
Journal of Materials Research , Volume 8 , Issue 1 , January 1993 , pp. 131 - 137
Copyright
Copyright © Materials Research Society 1993

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