Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Dashiell, M. W.
Xuan, G.
Zhang, Xin
Ansorge, E.
and
Kolodzey, J.
2002.
Strained SiC: Ge Layers in 4H SiC formed by Ge Implantation.
MRS Proceedings,
Vol. 742,
Issue. ,
Wöllmer, Silke
Zaefferer, Stefan
Göken, Mathias
Mack, Thomas
and
Glatzel, Uwe
2003.
Characterization of phases of aluminized nickel base superalloys.
Surface and Coatings Technology,
Vol. 167,
Issue. 1,
p.
83.
Gorelik, Tatiana
Urban, Sabine
Falk, Fritz
Kaiser, Ute
and
Glatzel, Uwe
2003.
Carbon onions produced by laser irradiation of amorphous silicon carbide.
Chemical Physics Letters,
Vol. 373,
Issue. 5-6,
p.
642.
Kaiser, U.
Muller, D.A.
Chuvilin, A.
Pasold, G.
and
Witthuhn, W.
2004.
The Formation of Clusters and Nanocrystals in Er-Implanted Hexagonal Silicon Carbide.
Microscopy and Microanalysis,
Vol. 10,
Issue. 02,
p.
301.
Biskupek, J
Kaiser, U
Lichte, H
Lenk, A
Pasold, G
and
Witthuhn, W
2005.
Microscopy of Semiconducting Materials.
Vol. 107,
Issue. ,
p.
319.
Biskupek, Johannes
Kaiser, Ute
Lichte, Hannes
Lenk, Andreas
Gemming, Thomas
Pasold, Gunnar
and
Witthuhn, Wolfgang
2005.
TEM-characterization of magnetic samarium- and cobalt-rich-nanocrystals formed in hexagonal SiC.
Journal of Magnetism and Magnetic Materials,
Vol. 293,
Issue. 3,
p.
924.
Yu, R.S.
Maekawa, M.
Kawasuso, A.
Wang, B.Y.
and
Wei, L.
2012.
Positron annihilation study of 4H-SiC by Ge+ implantation and subsequent thermal annealing.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 270,
Issue. ,
p.
47.
Malherbe, Johan B
2013.
Diffusion of fission products and radiation damage in SiC.
Journal of Physics D: Applied Physics,
Vol. 46,
Issue. 47,
p.
473001.
Zhang, Xiao
Lian, Gang
Si, Haibin
Wang, Jun
Cui, Deliang
and
Wang, Qilong
2013.
Novel BN porous-hollow nanorods: synthesis, tunable dimensions, property and formation mechanism.
Journal of Materials Chemistry A,
Vol. 1,
Issue. 38,
p.
11992.
Velişa, Gihan
Debelle, Aurélien
Thomé, Lionel
Mylonas, Stamatis
Vincent, Laetitia
Boulle, Alexandre
Jagielski, Jacek
and
Pantelica, Dan
2014.
Implantation of high concentration noble gases in cubic zirconia and silicon carbide: A contrasted radiation tolerance.
Journal of Nuclear Materials,
Vol. 451,
Issue. 1-3,
p.
14.
Chandran, N.
Sall, Mamour
Arvanitidis, Jarvan
Christofilos, Dimitris
Alassaad, Kassem
Ferro, Gabriel
Soulière, Véronique
and
Polychroniadis, Efstathios K.
2015.
On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface.
Materials Science Forum,
Vol. 821-823,
Issue. ,
p.
961.
Li, B.S.
Du, Y.Y.
and
Wang, Z.G.
2015.
Recrystallization of He-ion implanted 6H-SiC upon annealing.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
Vol. 345,
Issue. ,
p.
53.
Ferro, Gabriel
2022.
Growth and doping of silicon carbide with germanium: a review.
Critical Reviews in Solid State and Materials Sciences,
Vol. 47,
Issue. 4,
p.
520.
Ishiji, Kotaro
Arita, Makoto
Adachi, Mariko
Sugie, Ryuichi
Morita, Yukihiro
and
Araki, Tsutomu
2024.
Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC.
Journal of Applied Physics,
Vol. 135,
Issue. 18,