Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-23T11:58:08.823Z Has data issue: false hasContentIssue false

Transmission electron microscopy studies of bismuth films

Published online by Cambridge University Press:  31 January 2011

S. Nahm
Affiliation:
University of Maryland, College Park, Maryland 20742-2115
L. Salamanca-Riba
Affiliation:
University of Maryland, College Park, Maryland 20742-2115
D. L. Partin
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090-9055
J. Heremans
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090-9055
Get access

Abstract

We have studied the structure of Bi films grown on BaF2 substrates as a function of the distance from the interface with the substrate. Close to the interface the films show a polycrystalline structure and probably contain some amorphous regions. The crystallite size increases as the distance from the interface increases. At distances ≥90 nm the film becomes single crystalline and has the (111) trigonal direction normal to the film surface. Our structural data relate very well to mobility measurements performed on samples grown under the same conditions. Our results suggest that the carrier mobility is higher at distances ≥90 nm from the interface, where the film is single crystalline, than close to the interface, where it is polycrystalline.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Partin, D.L., Heremans, J.P., Morelli, D.T., Thrush, C.M., Olk, C.H., and Perry, T. A., Phys. Rev. B 38, 3818 (1988).CrossRefGoogle Scholar
2Sandomirskii, V. B., JETP 52, 158 (1967).Google Scholar
3Ogrin, Yu. F., Lutskii, V. N., and Elinson, M.I., JETP Lett. 3, 71 (1966).Google Scholar
4Garcia, N., Kao, Y. H., and Strongin, Myron, Phys. Rev. B 5, 2029 (1972).CrossRefGoogle Scholar
5Asahi, H., Humoto, T., and Kawazu, A., Phys. Rev. B 9, 3347 (1974)CrossRefGoogle Scholar
6Lutskii, V. N., Sov. Phys. JETP Lett. 2, 245 (1965).Google Scholar
7Duggal, V. P. and Raj Rup, J. Appl. Phys. 40, 492 (1969).CrossRefGoogle Scholar
8Takaoka, S. and Murase, K., J. Phys. Soc. Jpn. 54, 2250 (1985).CrossRefGoogle Scholar
9Shin, Sung C., Hilliard, J. E., and Ketterson, J. B., Thin Solid Films 111, 323 (1984).CrossRefGoogle Scholar