Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T02:41:14.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin film processing for high-Tc superconductors of the Bi-system

Published online by Cambridge University Press:  31 January 2011

Kiyotaka Wasa ,
Hideaki Adachi ,
Kumiko Hirochi ,
Yo Ichikawa ,
Tomoaki Matsushima  and
Kentaro Setsune
Kiyotaka Wasa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Hideaki Adachi
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Kumiko Hirochi
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Tomoaki Matsushima
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Kentaro Setsune
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Get access

Abstract

Basic thin film deposition processes for controlled deposition of the high-Tc superconductors of the Bi-systems are described. The layered structures of Bi-oxide superconductors are fabricated by a multitarget sputtering process. The multitarget sputtering process realizes the controlled deposition of single phase Bi-oxide superconductors, Bi2O2 · 2SrO · (n −1)CaO · nCuO2 for n = 1 to 5. The minimum thickness controlled by the multitarget sputtering is a half crystal unit-cell of around 15 Å, and the superlattices comprising (AkBk) · m, where A and B denote the Bi-oxide superconductors with different numbers of Cu–O layers, could be fabricated for k > 1, although ion mixing takes place during the sputtering deposition due to the bombardment of the highly energetic sputtered adatoms. Multitarget sputtering will be available for the fabrication of the artificially-made layered oxide superconductors (ALOS).

Type
Commentaries and Reviews
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1595 - 1604
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Michel, C., Hervieu, M., Borei, M. M., Grandin, A., Deslandes, F., Provost, J., and Raveau, B., Z. Phys. B 68, 421 (1987).Google Scholar
2.Akimitsu, J., Yamazaki, A., Sawa, H., and Fujiki, H., Jpn. J. Appl. Phys. 26, L2080 (1987).Google Scholar
3.Maeda, H., Tanaka, Y., Fukutomi, M., and Asano, T., Jpn. J. Appl. Phys. 27, L209 (1988).Google Scholar
4.Adachi, H., Kohiki, S., Setsune, K., Mitsuyu, T., and Wasa, K., Jpn. J. Appl. Phys. 27, L1883 (1988).Google Scholar
5.Kondoh, S., Ando, Y., Onoda, M., Sato, M., and Akimitsu, J., Solid State Commun. 65, 1329 (1988).Google Scholar
6.Sheng, Z. Z., Hermann, A. M., El Ali, A., Almasan, C., Estrada, J., Datta, T., and Maison, R. J., Phys. Rev. Lett. 60, 937 (1988).CrossRefGoogle Scholar
7.Sheng, Z. Z. and Hermann, A. M., Nature 332, 138 (1988).Google Scholar
8.Parkin, S. S. P., Lee, V. Y., Engler, E. M., Nazzal, A. I., Huang, T. C., Gorman, G., Savoy, R., and Beyers, R., Phys. Rev. Lett. 60, 432 (1988).Google Scholar
9.Beyers, R., Parkin, S.S.P., Lee, V.Y., Nazzal, A.I., Savoy, R., Gorman, G., Huang, T. C., and LaPlaca, S., Appl. Phys. Lett. 53, 432 (1988).Google Scholar
10.Parkin, S. S., Lee, V. Y., Nazzal, A. I., Savoy, R., and Beyers, R., Phys. Rev. Lett. 61, 750 (1988).Google Scholar
11.Ihara, H., Sugise, R., Hirabayashi, M., Terada, N., Jo, M., Hayashi, K., Negishi, A., Tokumoto, M., Kimura, Y., and Shimomura, T., Nature 334, 510 (1988).Google Scholar
12.Wasa, K., Kitabatake, M., Adachi, H., Setsune, K., and Hirochi, K., in Thin Film Processing and Characterization of High-Temperature Superconductors, American Vacuum Society Series 3, edited by Lucovsky, G. (AIP Conference Proc. No. 165, Anaheim, CA, 1987), p. 38.Google Scholar
13.Adachi, H., Setsune, K., Hirochi, K., Kamada, T., and Wasa, K., Proc. Int. Conf. on High-Temp., Superconductors and Materials and Mechanisms of Superconductivity, E12 (Switzerland, 1988);Google Scholar
Kang, J. H., Kampwith, R. T., and Gray, K. E., Appl. Phys. Lett. 52, 2080 (1988);Google Scholar
Kang, J.H., Kampwith, R.T., Gray, K.E., Marsh, S., and Huff, E.A., Phys. Lett. 128, 102 (1988).Google Scholar
14.Eckstein, J.N., Schlom, D.G., Hellman, E.S., von Dessonneck, K.E., Chen, Z. J., Webb, C., Turner, F., Harris, J. S. Jr, Beasley, M. R., and Geballe, T. H., J. Vac. Sci. Technol. B 7, 319 (1989);Google Scholar
Rice, C. E., Levi, A. F. J., Fleming, R. M., Marsh, P., Baldwin, K. W., Anzlower, M., White, A. E., Short, K. T., Nakahara, S., and Stormer, H. L., Appl. Phys. Lett. 52, 1828 (1988).Google Scholar
15.Yamane, H., Kurosawa, H., Hirai, T., Iwasaki, H., Kobayashi, N., and Muto, Y., Jpn. J. Appl. Phys. 27, L1495 (1988);Google Scholar
Lolentz, R.D. and Sexton, J.H., Appl. Phys. Lett. 53, 1654 (1988).Google Scholar
16.Kanai, M., Kawai, T., Kawai, M., and Kawai, S., Jpn. J. Appl. Phys. 27, L1293 (1988).Google Scholar
17.Sato, T., Yoshitake, T., Kubo, Y., and Igarashi, H., Appl. Phys. Lett. 53, 1213 (1988).Google Scholar
18.Kohiki, S., Hirochi, K., Adachi, H., Setsune, K., and Wasa, K., Phys. Rev. B 39, 4695 (1989).Google Scholar
19.Sumiyama, A., Yoshitoshi, T., Endo, H., Tsuchiya, J., Kijima, N., Mizuno, M., and Oguri, Y., Jpn. J. Appl. Phys. 27, 1542 (1988).Google Scholar
20.Nobumasa, H., Shimizu, K., Kitano, Y., and Kawai, T., Jpn. J. Appl. Phys. 27, L846 (1988).Google Scholar
21.Cava, R. J., 1988 Spring Meeting of the APS, March (American Physical Society, 1988);Google Scholar
Politis, C., MRS 1988 Spring Meeting, Reno, April 6 (1988);Google Scholar
Takano, M., Takada, J., Oda, K., Kitaguchi, H., Miura, Y., Ikeda, Y., Tomii, Y., and Mazaki, H., Jpn. J. Appl. Phys. 27, L1041 (1988).Google Scholar
22.Yoshimura, K., Kuwahara, H., and Tanemura, S., Proc. ISEM, Tokyo, October 1988.Google Scholar
23.Endo, U., Koyama, S., and Kawai, T., Jpn. J. Appl. Phys. 27, L1476 (1988).Google Scholar
24.Wasa, D. G., Adachi, H., Ichikawa, Y., Hirochi, K., and Setsune, K., Science and Technology of Thin Film Superconductors, edited by McConnell, R. D. and Wolf, S. A. (Plenum Press, New York, 1989), p. 147.Google Scholar
25.Schlom, D.G., Eckstein, J.N., Bozovic, I., Marshall, A.F., Sizemore, J.T., Chen, Z. T., von Dessonneck, K. E., Harris, J. S. Jr, and Brauman, J.C., Proc. of 1989 MRS Fall Meeting, Boston, 1989, M10.6.Google Scholar
26.Fujita, J. I., Tatsumi, T., Yoshitake, T., and Igarashi, H., Conference on the Sci. and Technol. of Thin Film Superconductors, Colorado Springs, CO, Nov. 14–18 (1988);Google Scholar
Fujita, J., Tatsumi, T., Yoshitake, T., and Igarashi, H., Appl. Phys. Lett. 54, 2364 (1989).Google Scholar
27.Kawai, T., Kanai, M., and Kawai, S., Conference on the Sci. and Technol. of Thin Film Superconductors, Colorado Springs, CO, Nov. 14–18 (1988).Google Scholar
28.Kitabatake, M., Fons, P., and Green, J. E., in Molecular Dynamics Simulations of Low-Energy Ion/Surface Interactions during Vapor Phase Crystal Growth: 10 eV Si Incident on Si(001) 2×1, edited by Knapp, James A., Børgesen, Peter, and Zuhr, Raymond A. (Mater. Res. Soc. Symp. Proc. 157, Pittsburgh, PA, 1990).Google Scholar
29.Fukunaga, T., Kobayashi, K. L. I., and Nakashima, H., Jpn. J. Appl. Phys. 24, L510 (1985).Google Scholar
30.Wasa, K., 1989 MRS Fall Meeting Proc. M10.1 (1989, Boston).Google Scholar
31.Ichikawa, Y., Yoshida, M., Adachi, H., Setsune, K., and Wasa, K., Proc. AVS 36th National Symposium (Boston, 1989) TC1-MoE4.Google Scholar
32.Adachi, H., Ichikawa, Y., Hirochi, K., Matsushima, T., Setsune, K., and Wasa, K., Jpn. J. Appl. Phys. 29, L81 (1990).Google Scholar
33.Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., Proc. of the 6th Meeting on Ferroelectric Materials and their Applications, Kyoto, 1987.Google Scholar
34.Triscone, J. M., Karkut, M. G., Antognazza, L., Brunner, O., and Fischer, O., Phys. Rev. Lett. 63, 1016 (1989).Google Scholar
35.Triscone, J. M., Michael, G., Brunner, O., Antognazza, L., and Fischer, O., Proc. of 1989 MRS Fall Meeting, Boston 1989, M11.6.Google Scholar
36.Tabata, H., Kawai, T., Kanai, M., Murata, O., and Kawai, S., Jpn. J. Appl. Phys. 28, L823 (1989).Google Scholar
37.Enokihara, A., Higashino, H., Setsune, K., and Wasa, K., Jpn. J. Appl. Phys. 27, L510 (1988).Google Scholar
38.Lowndes, D.H., Norton, D.P., Budai, J.D., Pennycook, S.J., Christen, D.K., Sales, B.C., and Feenstra, R., in Superconductivity in Nonsymmetric Epitaxial YBa2Cu3O7−δ – PrBa2Cu3O7−δ Superlattices Grown by Pulsed Laser Ablation, edited by Paine, David C. and Bravman, John C. (Mater. Res. Soc. Symp. Proc. 191, Pittsburgh, PA, 1990).Google Scholar
39.Li, Q., Xi, X.X., Wu, X.D., Inam, A., Vadlamannati, S., Maclean, W. L., Venkatesan, T., Ramesh, R., Hwang, D.M., Martinez, J.A., and Nazar, L., Phys. Rev. Lett. 64, 3086 (1990).Google Scholar
40.Kanai, M., Kawai, T., and Kawai, S., Appl. Phys. Lett. 57, 198 (1990).Google Scholar
41.Matsushima, T., private communication (1990).Google Scholar