Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-16T14:01:15.677Z Has data issue: false hasContentIssue false

Thermomigration of Cu–Sn and Ni–Sn intermetallic compounds during electromigration in Pb-free SnAg solder joints

Published online by Cambridge University Press:  30 March 2011

Hsiao-Yun Chen
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China
Chih Chen*
Affiliation:
Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Thermomigration in Pb-free SnAg solder alloys is investigated during accelerated electromigration tests under 9.7 × 103 A/cm2 at 150 °C. It is found that Cu–Sn intermetallic compounds (IMCs) migrate toward the cold end on the substrate side and, as a result, voids accumulate in the chip side for the bump with current flowing from the substrate end to the chip end. Theoretical calculations indicate that the thermomigration force is greater than the electromigration force at a thermal gradient above 400 °C/cm for this stressing condition. Copper atoms may migrate against current flow and become the dominant diffusion species. On the other hand, Ni–Sn IMCs did not migrate even under a huge thermal gradient of 1400 °C/cm. These findings provide more understanding on the thermomigration of metallization materials in flip-chip solder joints.

Type
Articles
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Chen, C., Tong, H.M., and Tu, K.N.: Electromigration and thermomigration in Pb-free flip-chip solder joints. Annu. Rev. Mater. Res. 40, 531 (2010).CrossRefGoogle Scholar
2.Chen, L.D., Huang, M.L., and Zhou, S.M.: Effect of electromigration on intermetallic compound formation in line-type Cu/Sn/Cu interconnect. J. Alloy. Comp. 504, 535 (2010).CrossRefGoogle Scholar
3.Zhang, J.S., Chan, Y.C., Wu, Y.P., Xi, H.J., and Wu, F.S.: Electromigration of Pb-free solder under a low level of current density. J. Alloy. Comp. 458, 492 (2008).CrossRefGoogle Scholar
4.Lin, H.J., Lin, J.S., and Chuang, T.H.: Electromigration of Sn–3Ag–0.5Cu and Sn–3Ag–0.5Cu–0.5Ce–0.2Zn solder joints with Au/Ni(P)/Cu and Ag/Cu pads. J. Alloy. Comp. 487, 458 (2009).CrossRefGoogle Scholar
5.Chao, B., Chae, S.H., Zhang, X.F., Lu, K.H., Im, J., and Ho, P.S.: Investigation of diffusion and electromigration parameters for Cu-Sn intermetallic compounds in Pb-free solders using simulated annealing. Acta Mater. 55(8), 2805 (2007).CrossRefGoogle Scholar
6.Ye, H., Basaran, C., and Hopkins, D.C.: Thermomigration in Pb–Sn solder joints under joule heating during electric current stressing. Appl. Phys. Lett. 82, 1045 (2003).CrossRefGoogle Scholar
7.Huang, A.T., Gusak, A.M., Tu, K.N., and Lai, Y.S.: Thermomigration in SnPb composite flip chip solder joints. Appl. Phys. Lett. 88, 141911 (2006).CrossRefGoogle Scholar
8.Chiu, S.H., Shao, T.L., Chen, C., Yao, D.J., and Hsu, C.Y.: Infrared microscopy of hot spots induced by Joule heating in flip-chip SnAg solder joints under accelerated electromigration. Appl. Phys. Lett. 88(2), 022110 (2006).CrossRefGoogle Scholar
9.Nah, J.W., Kim, J.H., Lee, H.M., and Paik, K.W.: Electromigration in flip chip solder bump of 97Pb–3Sn/37Pb–63Sn combination structure. Acta Mater. 52(1), 129 (2004).CrossRefGoogle Scholar
10.Lin, Y.H., Hu, Y.C., Tsai, C.M., Kao, C.R., and Tu, K.N.: In situ observation of the void formation-and-propagation mechanism in solder joints under current-stressing. Acta Mater. 53(7), 2029 (2005).CrossRefGoogle Scholar
11.Shao, T.L., Liang, S.W., Lin, T.C., and Chen, C.: Three-dimensional simulation on current-density distribution in flip-chip solder joints under electric current stressing. J. Appl. Phys. 980, 44509 (2005).CrossRefGoogle Scholar
12.Alama, M.O., Wua, B.Y., Chan, Y.C., and Tu, K.N.: High electric current density-induced interfacial reactions in micro ball grid array (μBGA) solder joints. Acta Mater. 54, 613 (2006).CrossRefGoogle Scholar
13.Nah, J.W., Paik, K.W., and Suh, J.O.: Mechanism of electromigration-induced failure in the 97Pb–3Sn and 37Pb–63Sn composite solder joints. J. Appl. Phys. 94, 7560 (2003).CrossRefGoogle Scholar
14.Hsiao, H.Y. and Chen, C.: Thermomigration in flip-chip SnPb solder joints under alternating current stressing. Appl. Phys. Lett. 90(15), 152105 (2007).CrossRefGoogle Scholar
15.Chen, H.Y., Chen, C., and Tu, K.N.: Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints. Appl. Phys. Lett. 93, 122103 (2008).CrossRefGoogle Scholar
16.Hsiao, H.Y. and Chen, C.: Thermomigration in Pb-free SnAg solder joint under alternating current stressing. Appl. Phys. Lett. 94, 092107 (2009).CrossRefGoogle Scholar
17.Hsiao, H.Y., Liang, S.W., Ku, M.F., Chen, C., and Yao, D.J.: Direct measurement of hot-spot temperature in flip-chip solder joints under current stressing using infrared microscopy. J. Appl. Phys. 104, 033708 (2008).CrossRefGoogle Scholar
18.Chang, Y.W., Liang, S.W., and Chen, C.: Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes. Appl. Phys. Lett. 89(3), 032103 (2006).CrossRefGoogle Scholar
19.Huntington, H.B.: Diffusion, Chap. 6 (American Society for Metals, 1973).Google Scholar
20.Huntington, H.B. and Grone, A. R.: Current-induced marker motion in gold wires. J. Phys. Chem. Solid. 20, 76 (1961).CrossRefGoogle Scholar
21.Lee, K.L., Hu, C.K., and Tu, K.N.: In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects. J. Appl. Phys. 78(7), 4428 (1995).CrossRefGoogle Scholar
22.Shewmon, P.G.: Diffusion in Solids, Chap. 7 (TMS, Warrendale, PA, 1989).Google Scholar
23.Ragone, D.V.: Thermodynamics of Materials, Vol. 2, Chap. 8 (Wiley, New York, 1995).Google Scholar
24.Kima, D.G., Kim, J.W., Ha, S.S., Noh, B.I., Koo, J.M., Park, D.W., Ko, M.W., and Jung, S.B.: Effect of reflow numbers on the interfacial reaction and shear strength of flip chip solder joints. J. Alloy. Comp. 458, 253 (2008).CrossRefGoogle Scholar
25.Meechan, C.J. and Lehman, G.W.: Diffusion of Au and Cu in a temperature gradient. J. Appl. Phys. 33(2), 634 (1962).CrossRefGoogle Scholar
26.Zeng, K. and Tu, K.N.: Six cases of reliability study of Pb-free solder joints in electron packaging technology. Mater. Sci. Eng., R R38, 55 (2002).CrossRefGoogle Scholar
27.Cahn, R.W. and Haasen, P.: Physical Metallurgy, 4th ed. (North Holland, The Netherland, 1996).Google Scholar
28.Liang, S.W., Chang, Y.W., and Chen, C.: 3-D thermo-electrical simulation in flip-chip solder joints with thick under bump metallizations during accelerated electromigration testing. J. Electron. Mater. 36(2), 159 (2007).CrossRefGoogle Scholar
29.Yeh, D.C. and Huntington, H.B.: Extreme fast-diffusion system: Nickel in single-crystal tin. Phys. Rev. B. 53(15), 1469 (1984).Google Scholar