Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-22T22:39:28.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermogravimetric analysis of the oxidation resistance of ZrB2–SiC and ZrB2–Sic–TaB2–based compositions in the 1500–1900 °C range

Published online by Cambridge University Press:  11 January 2011

Fei Peng ,
Gregg Van Laningham  and
Robert F. Speyer
Fei Peng
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Gregg Van Laningham
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
Robert F. Speyer*
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Theoretically dense ZrB2–SiC two-phase microstructures were isothermally oxidized for ∼90 min in flowing air in the range 1500–1900 °C. Specimens with 30 mol% SiC formed distinctive reaction product layers that were highly protective; 28 mol% SiC–6 mol% TaB2 performed similarly. At and above 1700 °C, the composition with only 15 mol% SiC oxidized extensively because of deficient silicate liquid formation. Specimens with 60 mol% SiC were resistant to oxidation up to 1800 °C; at 1900 °C, this composition displayed periodic ruptures of the passivating layer by emerging gas bubbles. Oxide coating thicknesses calculated from weight loss data were consistent with those measured from scanning electron microscopy micrographs. A layer of ZrB2 devoid of SiC was argued to be from preferential removal of SiC by reaction of a silica oxidation product with adjacent unreacted SiC to form escaping gases.

Keywords

OxidationThermogravimetric analysis (TGA)Microstructure
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 1 , 14 January 2011 , pp. 96 - 107
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Peng, F., Berta, Y., and Speyer, R.F.: Effect of SiC, TaB2 and TaSi2 additives on the isothermal oxidation resistance of fully dense zirconium diboride. J. Mater. Res. 24(5), 1855 (2009).CrossRefGoogle Scholar
2.Speyer, R.F.: Effect of SiC, TaB2 and TaSi2 additives on the isothermal oxidation resistance of fully dense zirconium diboride, presented at the Workshop on Aerospace Materials for Extreme Environments (AFORS, Clayton MO, Aug. 5, 2009).Google Scholar
3.Karlsdottir, S.N., Halloran, J.W., and Grundy, A.N.: Zirconia transport by liquid convection during oxidation of zirconium diboride-silicon carbide. J. Am. Ceram. Soc. 91(1), 272 (2008).CrossRefGoogle Scholar
4.Opila, E.J. and Halbig, M.C.: Oxidation of ZrB2–SiC. Elec. Chem. Soc. Proc. 12, 221 (2002).Google Scholar
5.Rezaie, A., Fahrenholtz, W.G., and Hilmas, G.E.: Evolution of structure during the oxidation of zirconium diboride-silicon carbide in air up to 1500 °C. J. Europ. Ceram. Soc. 27, 2495 (2007).CrossRefGoogle Scholar
6.Fahrenholtz, W.G.: Thermodynamic analysis of ZrB2–SiC oxidation: Formation of a SiC-depleted region. J. Am. Ceram. Soc. 90(1), 143 (2007).CrossRefGoogle Scholar
7.Opeka, M., Talmy, I., and Zaykoski, J.: Oxidation-based materials selection for 2000° C + hypersonic aerosurfaces: Theoretical considerations and historical experience. J. Mater. Sci. 39, 5887 (2004).CrossRefGoogle Scholar
8.Rezaie, A.R., Fahrenholtz, W.G., and Hilmas, G.E.: Oxidation of zirconium diboride-silicon carbide at 1500 °C in a low partial pressure of oxygen. J. Am. Ceram. Soc. 89(10), 3240 (2006).CrossRefGoogle Scholar
9.Han, J., Hu, P., Zhang, X., and Meng, S.: Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C. Scripta Mater. 57, 825 (2007).CrossRefGoogle Scholar
10.Han, W., Hu, P., Zhang, X., Han, J., and Meng, S.: High-temperature oxidation at 1900 °C of ZrB2–xSiC ultrahigh-temperature ceramic composites. J. Am. Ceram. Soc. 91(10), 3328 (2008).CrossRefGoogle Scholar
11.Karlsdottir, S.N. and Halloran, J.W.: Rapid oxidation characterization of ultra-high temperature ceramics. J. Am. Ceram. Soc. 90(10), 3233 (2007).CrossRefGoogle Scholar
12.Hu, P., Zhang, X., Han, J., Luo, X., and Du, S.: Effect of various additives on the oxidation behavior of ZrB2–based ultra-high-temperature ceramics at 1800 °C. J. Am. Ceram. Soc. 93(2), 345–349 (2010).CrossRefGoogle Scholar
13.Zhang, X., Hu, P., Han, J., and Meng, S.: Ablation behavior of ZrB2-SiC ultra high temperature ceramics under simulated atmosphere re-entry conditions. Comp. Sci. Technol. 68, 1718 (2008).CrossRefGoogle Scholar
14.Monteverde, F., Savino, R., Fumo, M.D.S., and Maso, A.D.: Plasma wind tunnel testing of ultra-high temperature ZrB2–SiC composites under hypersonic re-entry conditions. J. Euro. Ceram. Soc. 30, 2313 (2010).CrossRefGoogle Scholar
15.Monteverde, F. and Savino, R.: Stability of ultra-high temperature ZrB2-SiC ceramics under simulated atmospheric re-entry conditions. J. Euro. Ceram. Soc. 27, 4797 (2007).CrossRefGoogle Scholar
16.Han, J., Hu, P., Zhang, X., Meng, S., and Han, W.: Oxidation-resistant ZrB2–SiC composites at 2200 °C. Comp. Sci. Technol. 68, 799 (2008).CrossRefGoogle Scholar
17.Speyer, R.F.: Thermal Analysis of Materials (Marcel Dekker, New York, 1994).Google Scholar
18.Clase, M.W. Jr: NIST-JANAF thermochemical tables, in J. Phys. Chem. Ref. Data, Monograph 9, 4th Ed. (American Institute of Physics, Woodbury, NY, 1998).Google Scholar