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Thermal stability of TiSi2 films on single crystal and polycrystalline silicon

Published online by Cambridge University Press:  31 January 2011

Krishna Shenai
Krishna Shenai
Affiliation:
General Electric Corporate Research and Development Center, River Road, Schenectady, New York 12301
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Abstract

The stability of selectively formed TiSi2 films on single crystal and polycrystalline silicon layers at elevated process temperatures is reported. Extensive electrical and analytical studies were performed to understand the high-temperature stability of TiSi2 films as a function of (i) substrate dopant concentration, (ii) titanium silicide thickness, (iii) silicide formation sequence, and (iv) silicide post-processing steps. It is shown that all four process variations have a profound influence on the thermal stability of TiSi2 films. It is observed that titanium silicide films formed on single crystal silicon are stable at higher processing temperatures compared to those formed on polysilicon substrates under similar conditions. The degradation of high-temperature stability of TiSi2 films on polycrystalline silicon can be related to increased number of defects and grain boundaries. It is shown that TiSi2 films can be successfully used in silicon integrated circuit applications where the post-silicide processing temperatures do not exceed 1000 °C.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1502 - 1511
Copyright
Copyright © Materials Research Society 1991

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References

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