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Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films

Published online by Cambridge University Press:  31 January 2011

X.D. Wu ,
L. Luo ,
R.E. Muenchausen  and
S.R. Foltyn
X.D. Wu
Affiliation:
Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
L. Luo
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
R.E. Muenchausen
Affiliation:
Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
S.R. Foltyn
Affiliation:
Exploratory Research and Development Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Regrowth of ion-damaged YBa2Cu3O7−δ thin films on LaAlO3 was studied using the ion beam channeling technique. The damaged films can be regrown at a temperature as low as 650 °C, and are stable up to 1000 °C. The regrowth process was found to be thermally activated with a single activation energy of 0.46 eV, contrary to two energies found in a previous study on the films on MgO [J. A. Martinez et al., Appl. Phys. Lett. 57, 189 (1990)].

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 531 - 534
Copyright
Copyright © Materials Research Society 1992

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References

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