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Tert-butylamine and Allylamine as Reductive Nitrogen Sources in Atomic Layer Deposition of TaN Thin Films

Published online by Cambridge University Press:  31 January 2011

Petra Alén ,
Marika Juppo ,
Mikko Ritala ,
Markku Leskelä ,
Timo Sajavaara  and
Juhani Keinonen
Petra Alén
Affiliation:
The Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Marika Juppo
Affiliation:
The Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Mikko Ritala
Affiliation:
The Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Markku Leskelä
Affiliation:
The Laboratory of Inorganic Chemistry, Department of Chemistry, P.O. Box 55, FIN-00014 University of Helsinki, Finland
Timo Sajavaara
Affiliation:
The Accelerator Laboratory, Department of Physics, P.O. Box 43, FIN-00014 University of Helsinki, Finland
Juhani Keinonen
Affiliation:
The Accelerator Laboratory, Department of Physics, P.O. Box 43, FIN-00014 University of Helsinki, Finland
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Abstract

The atomic layer deposition technique was used to deposit TaN thin films from TaCl5 and TaBr5 and tert-butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis, energy-dispersive x-ray spectroscopy, x-ray diffraction, and the standard four-point probe method. The films deposited from tert-butylamine and ammonia with both tantalum precursors had reasonably low halide contents. When allylamine was used as a nitrogen source, on the contrary, the films contained larger amounts of chlorine and other impurities. The resistivity increased markedly as the deposition temperature was decreased. The lowest resistivities (below 1500 μΩ cm) were obtained when the films were deposited from TaCl5 or TaBr5 with tert-butylamine at 500 °C.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 107 - 114
Copyright
Copyright © Materials Research Society 2002

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