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Tensile strength of zinc oxide films measured by a microbridge method

Published online by Cambridge University Press:  03 March 2011

C. W. Ong ,
D. G. Zong ,
M. Aravind ,
C. L. Choy  and
D. R. Lu
C. W. Ong*
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
D. G. Zong
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
M. Aravind
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
C. L. Choy
Affiliation:
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
D. R. Lu
Affiliation:
State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy, Academy of Sciences, Shanghai, People's Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Double-layered ZnO/silicon nitride microbridges were fabricated for microbridge tests. In a test, a load was applied to the center of the microbridge specimen by using a microwedge tip, where the displacement was recorded as a function of load until the specimen broke. The silicon nitride layer in the structure served to enhance the robustness of the specimen. By fitting the data to a theory, the elastic modulus, residual stress, and tensile strength of the ZnO film were found to be 137 ± 18 GPa, −0.041 ± 0.02 GPa, and 0.412 ± 0.05 GPa, respectively. The analysis required the elastic modulus, internal stress, and tensile strength of the silicon nitride layer. They were measured separately by microbridge tests on single-layered silicon nitride microbridges. The measured tensile strength of the ZnO films represents the maximum tolerable tensile stress that the films can sustain when they are used as the functional component in devices.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 10 , October 2003 , pp. 2464 - 2472
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1.Dan, C-H. and Kim, E.S., in Proceedings of the Fourteenth IEEE International Conference on Micro Electro Mechanical Systems (2001), p. 110.Google Scholar
2.Yong, Y-J., Kang, Y-S., Lee, P.S., and Lee, J-Y., J. Vac. Sci. Technol. B 20, 42 (2002).Google Scholar
3.Park, S.H., Seo, B.C., Yoon, G., and Park, H.D., J. Vac. Sci. Technol. A 18, 2432 (2000).Google Scholar
4. Committee on Advanced Materials and Fabrication Methods for Microelectromechanical Systems, Microelectromechanical Systems: Advanced Materials and Fabrication Methods (National Academy Press, Washington D.C., 1997), p. 2.Google Scholar
5.Gong, X. and Suo, Z., J. Mech. Phys. Solids 44, 751 (1996).Google Scholar
6.dos, S.L.Lucato, Santos e, Bahr, H-A., Pham, V-B., Lupascu, D.C., Balke, H., Rödel, J., and Bahr, U., J. Mech. Phys. Solids 44, 751 (2002).Google Scholar
7.Cardinale, G.F. and Tustison, R.W., Thin Solid Films 207, 126 (1992).CrossRefGoogle Scholar
8.Vlassak, J.J. and Nix, W.D., J. Mater. Res. 7, 3242 (1992).CrossRefGoogle Scholar
9.Su, Y-J., Qian, C-F., Zhao, M-H., and Zhang, T-Y., Acta Mater. 48, 4901 (2000).Google Scholar
10.Zhang, T-Y., Su, Y-J., Qian, C-F., Zhao, M-H., and Chen, L-Q., Acta Mater. 48, 2843 (2000).Google Scholar
11.Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
12.Teter, D.M., MRS Bull. 23, 22 (1998).Google Scholar
13.Tsang, M.P., Ong, C.W., Chong, N., Choy, C.L., Lim, P.K., and Hung, W.W., J. Vac. Sci. Technol. A 19, 2542 (2001).Google Scholar
14.Adam, A.C., in VLSI Technology, edited by Sze, S.M. (McGraw- Hill, Singapore, 1985), p. 120.Google Scholar
15.Budinski, K.G. and Budinski, M.K., Engineering Materials: Properties and Selection, 6th ed. (Prentice Hall, Englewood Cliffs, NJ, 1999), p. 694.Google Scholar
16.Yang, J.L. and Paul, O., Sens. Actuators A 97–98, 520 (2002).Google Scholar
17.Ogata, S., Hirosaki, N., Kocer, C., and Kitagawa, H., Phys. Rev. B 64, article 172102 (2001).Google Scholar
18.Jade, S.A. and Smith, J.G., IEEE Trans. Ultrason., Ferroelect., Freq. Contr. 46, 768 (1999).Google Scholar
19.Kucheyev, S.O., Bradby, J.E., Williams, J.S., Jagadish, C., and Swain, M.V., Appl. Phys. Lett. 6, 956 (2002).Google Scholar
20.Gupta, V. and Mansingh, A., J. Appl. Phys. 80, 1063 (1996).Google Scholar
21.Cimpoiasu, A., Pers, N.M. van der, Keyser, Th.H. de, Venema, A., and Vellekoop, M.J., Smart Mater. Struct. 5, 744 (1996).Google Scholar
22.Hinze, J. and Ellmer, K., J. Appl. Phys. 88, 2443 (2002).Google Scholar
23.Lu, C., Danzer, R., and Fischer, F.D., Phys. Rev. E 65, article 067102 (2002).Google Scholar