Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-22T22:39:05.375Z Has data issue: false hasContentIssue false

Synthesis, Raman scattering, and infrared spectra of a new condensed form of GaN nanophase material

Published online by Cambridge University Press:  31 January 2011

Y. G. Cao*
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
X. L. Chen
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
Y. C. Lan
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
Y. P. Xu
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
T. Xu
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
J. K. Liang
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
*
a) Address all correspondence to this author.[email protected]
Get access

Abstract

A new form of transparent condensed nanophase material of GaN was synthesized directly by ammono-thermal synthetic route. Nano-sized effects and thermal stability of that material were investigated through Raman scattering and infrared spectra. Compared with bulk GaN, we observed the Raman low-energy-shift of the phonon frequency of E2(high) and the transverse optical mode [E1(TO)], the infrared high-energy-shift of, ωT, and the variation of relative intensity IE2/E1(TO). These characteristics can be attributed to the existence of the interface effects and the vacancy of N in the GaN nanophase material. This material has a high thermal stability even at 900 °C as indicated through infrared and Raman spectral investigation of annealed samples of as-synthesized nanophase material.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Monemar, B., Phys. Rev. B 10, 676 (1974).CrossRefGoogle Scholar
2.Nakamura, S., Science 281, 956 (1998).CrossRefGoogle Scholar
3.Xie, Y., Science 272, 1926 (1996).CrossRefGoogle Scholar
4.Han, W.Q., Fan, S.S., Li, Q.Q., and Hu, Y.D., Science 277, 1287 (1997).CrossRefGoogle Scholar
5.Siegel, R.W., in Physics of New Materials, edited by Fujita, F.E. (Springer-Verlag, Berlin, 1998), pp. 66106.CrossRefGoogle Scholar
6.Chen, X.L., Cao, Y.G., Lan, Y.C., Xu, Y.P., Tao, X., and Liang, J.K., J. Crystal. Growth (in press).Google Scholar
7.Wei, G., Zi, J., Zhang, K., and Xie, X., J. Appl. Phys. 82, 4693 (1997).CrossRefGoogle Scholar
8.Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Soga, T., and Jimbo, T., Appl. Phys. Lett. 73, 1472 (1998).Google Scholar
9.Barker, A.S. Jr, Phys. Rev. 132, 1474 (1963).CrossRefGoogle Scholar
10.Veprek, S., Iqbal, Z., Oswald, H.R., and Webb, A.P.. J. Phys. C 14, 295 (1981).CrossRefGoogle Scholar
11.Parker, J.C. and Siegal, R.W., Appl. Phys. Lett. 57, 943 (1990).CrossRefGoogle Scholar