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Synthesis, Raman scattering, and infrared spectra of a new condensed form of GaN nanophase material

Published online by Cambridge University Press:  31 January 2011

Y. G. Cao*
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
X. L. Chen
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
Y. C. Lan
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
Y. P. Xu
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
T. Xu
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
J. K. Liang
Affiliation:
Institute of Physics and Centre for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People's Republic of China
*
a) Address all correspondence to this author.[email protected]
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Abstract

A new form of transparent condensed nanophase material of GaN was synthesized directly by ammono-thermal synthetic route. Nano-sized effects and thermal stability of that material were investigated through Raman scattering and infrared spectra. Compared with bulk GaN, we observed the Raman low-energy-shift of the phonon frequency of E2(high) and the transverse optical mode [E1(TO)], the infrared high-energy-shift of, ωT, and the variation of relative intensity IE2/E1(TO). These characteristics can be attributed to the existence of the interface effects and the vacancy of N in the GaN nanophase material. This material has a high thermal stability even at 900 °C as indicated through infrared and Raman spectral investigation of annealed samples of as-synthesized nanophase material.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2000

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