Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T08:38:55.107Z Has data issue: false hasContentIssue false

Synthesis and Characterization of Oxygen Doped ZnTe for Powder Phosphor Application

Published online by Cambridge University Press:  03 March 2011

Z.T. Kang
Affiliation:
Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
H. Menkara
Affiliation:
Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
B.K. Wagner
Affiliation:
Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
C.J. Summers*
Affiliation:
Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
V. Valdna
Affiliation:
Tallinn Technical University, 19086 Tallinn, Estonia
*
a) Address all correspondence to this author.e-mail: [email protected]
Get access

Abstract

The synthesis of efficient ZnTe powder phosphors is very difficult due to its high moisture sensitivity and chemical instability during processing. In this study, an efficient ZnTe:O powder phosphor for x-ray imaging application was successfully synthesized by vacuum firing ZnTe powder prepared from ZnTe bulk crystals ball-milled in an O2 atmosphere. The phosphors were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence, and cathodoluminescence (CL) measurements and found to exhibit a luminescent efficiency three times that of ZnTe:O prepared by ZnO doping. The ZnTe:O samples exhibited a deep red emission centered at 680 nm and a CL decay time of 1.1μs.

Type
Articles
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Stringfellow, G.B. and Bube, R.H.: Photoelectronic properties of ZnSe crystals. Phys. Rev. 171, 903 (1968).CrossRefGoogle Scholar
2Durst, R., Diawara, Y., Mednikova, G., Thorson, T., Valdna, V., and Summers, C.: Advances in x-ray scintillator technology, 13th ESRF Users Meeting, Grenoble, France, 2003.Google Scholar
3Seong, M.J., Miotkowski, I. and Ramdas, A.K.: Oxygen isoelectronic impurities in ZnTe: Photoluminescence and absorption spectroscopy. Phys. Rev. B 58, 7734 (1998).CrossRefGoogle Scholar
4Biao, Y., Azoulay, M., George, M.A., Burger, A., Collins, W.E., Silberman, E., Su, C.H., Volz, M.E., Szofran, F.R. and Gillies, D.C.: Photoluminescence of vapor and solution grown ZnTe single crystals. J. Cryst. Growth 138, 219 (1994).CrossRefGoogle Scholar
5Garcia, J.A., Remon, A., Munoz, V. and Triboulet, R.: Photoluminescence study of radiative transitions in ZnTe bulk crystals. J. Cryst. Growth 191, 685 (1998).CrossRefGoogle Scholar
6Taguchi, T., Fujita, S. and Inuishi, Y.: Growth of high-purity ZnTe single crystals by the sublimation travelling heater method. J. Cryst. Growth 45, 204 (1978).CrossRefGoogle Scholar
7Widmer, R., Bortfeld, D.P. and Kleinknecht, H.P.: Liquid phase epitaxy on zinc telluride. J. Cryst. Growth 6, 237 (1970).CrossRefGoogle Scholar
8Bagaev, V.S., Zaitsev, V.V. and Onishchenko, E.E.: Luminescence of ZnTe films caused by two types of isovalent substitution. Phys. Solid State 38, 953 (1996).Google Scholar
9Loiko, N.N., Konnov, V.M., Sadofyev, Y.G., Makhov, E.I., Trushin, A.S. and Gippius, A.A.: Photoluminescence of Yb doped ZnTe. Phys. Status Solidi 229, 317 (2002).3.0.CO;2-S>CrossRefGoogle Scholar
10Hayashida, K., Tanaka, T., Nishio, M., Chang, Y., Wang, J., Wang, S., Guo, Q. and Ogawa, H.: Photoluminescence spectra of arsenic-doped ZnTe films grown by metalorganic vapor-phase epitaxy (MOVPE) using triethylarsine. J. Cryst. Growth 237–239, 1580 (2002).CrossRefGoogle Scholar
11Dietz, R.E., Thomas, D.G. and Hopfield, J.J.: “Mirror” absorption and fluorescence in ZnTe. Phys. Rev. Lett. 8, 391 (1962).CrossRefGoogle Scholar
12Hopfield, J.J., Thomas, D.G. and Lynch, R.T.: Isoelectronic donors and acceptors. Phys. Rev. Lett. 17, 312 (1966).CrossRefGoogle Scholar
13Burki, Y., Czaja, W., Capozzi, V. and Schwendimann, P.: The temperature dependence of the photoluminescence and lifetime of ZnTe:O. J. Phys. Condens. Mater. 5, 9235 (1993).CrossRefGoogle Scholar
14Norris, C.B.: Temperature, injection level, and frequency dependences of some extrinsic luminescence bands in ZnTe. J. Electron. Mater. 8, 733 (1979).CrossRefGoogle Scholar
15Iida, S.: Luminescence due to oxygen and self-activated centers in zinc telluride. J. Phys. Soc. Jpn. 32, 142 (1972).CrossRefGoogle Scholar
16Norris, C.B. and Hjalmarson, H.P.: The effects of Zn-vapor or Te-vapor heat treatment on the luminescence of ZnTe. J. Electron. Mater. 15, 331 (1986).CrossRefGoogle Scholar
17Cuthbert, J.D. and Thomas, D.G.: Fluorescent decay times of excitions bound to isoelectronic traps in GaP and ZnTe. Phys. Rev. 154, 763 (1967).CrossRefGoogle Scholar
18Magnea, N., Molva, E. and Bensahel, D.: Pair spectra in copper-doped zinc-telluride. Phys. Rev. B 22, 2983 (1980).CrossRefGoogle Scholar
19Valdna, V., Hiie, J., Kallavus, U., Mere, A. and Piibe, T.: ZnSe1−xTex solid solutions. J. Cryst. Growth 161, 177 (1996).CrossRefGoogle Scholar
20Foad, M.A., Watt, M., Smart, A.P., Torres, C.M.S., Wiikinsont, C.D.W., Kuhns, W., Wagner, H.P., Bauers, S., Leiderers, H. and Gebhardts, W.: High-resolution dry etching of zinc telluride: characterization of etched surfaces by x-ray photoelectron spectroscopy, photoluminescence and Raman scattering. Semicond. Sci. Technol. 6, All5 (1991).CrossRefGoogle Scholar
21Morris, G.C. and Tanner, P.G.: Preparation and properties of undoped and copper doped zinc telluride films. Mater. Forum 15, 179 (1991).Google Scholar
22Ryzhikov, V.D., Starzhinskiy, N.G., Gal’chinetskii, L.P., Silin, V.I., Tamulaitis, G. and Lisetskaya, E.K.: The role of oxygen in formation of radiative recombination centers in ZnSe1−xTex crystals. Inter. J. Inorg. Mater. 3, 1227 (2001).CrossRefGoogle Scholar
23Kang, Z.T., Menkara, H., Wagner, B.K., and Summers, C.J.: Effects of annealing atmosphere on the luminescent efficiency of ZnTe: O phosphors. J. Lumin. (in press).Google Scholar