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The synthesis and characteristics of SiC nanopowder produced by chemical vapor reaction of SiH4–C2H4–H2 system

Published online by Cambridge University Press:  31 January 2011

Xiu-chun Yang  and
Zi-shang Ding
Xiu-chun Yang
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
Zi-shang Ding
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
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Abstract

SiC nanometer powders were synthesized by the chemical vapor reaction of the SiH4–C2H4–H2 system in the temperature range between 1423 K and 1673 K. The effects of processing conditions such as reactive temperature, gas composition ratio, and total flow rate on powder characteristics were studied using transmission electron microscopy, x-ray diffraction, infrared, Brunauer–Emmett–Teller, and chemical analyses. A forming mechanism has been proposed for solid and hollow particles in different processing conditions. The experimental results concerning particle growth are discussed according to the model of G.D. Ulrich et al., which considers both collision and coalescence phenomena.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 10 , October 2000 , pp. 2140 - 2144
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Bowen, H.K., Mater. Sci. Eng. 44, 1 (1980).CrossRefGoogle Scholar
2. Okabe, Y., Hojo, J., and Koto, A., Nippon Kagaku Kaishi, 2, 188 (1980).CrossRefGoogle Scholar
3. Pai, C.H., Koumoto, K., Takeda, S., and Yanagida, H., J. Mater. Sci., 24, 3679 (1989).CrossRefGoogle Scholar
4. Chen, L., Goto, T., and Hirai, T., J. Mater. Sci., 24, 3824 (1989).CrossRefGoogle Scholar
5. Xu, Y.Q., Wang, Y.W., and Ding, Z.S., J. Chin. Ceram. Soc. 20, 42 (1992).Google Scholar
6. Yang, X.C., Ph.D. Thesis, Zhejiang University, Hongzhou, China (1996).Google Scholar
7. Yang, X.C., Han, G.R., Du, P.Y., and Ding, Z.S., Chinese Journal of Functional Materials 29, (1998).Google Scholar
8. Yang, X.C., Han, G.R., Zhang, X.B., and Ding, Z.S., Chinese Journal of Semiconductors, 19, 427 (1998).Google Scholar
9. Yang, X.C., Han, G.R., Li, F.S., Ding, Z.S., and Chou, K.C., Chinese Journal of Inorganic Materials, 13, 99 (1998).Google Scholar
10. Chen, L., Goto, T., and Hirai, T., J. Mater. Sci. 25, 4273 (1990).CrossRefGoogle Scholar
11. Buffat, Ph. and Borel, J-P., Phys. Rev. A. 13, 2287 (1976).Google Scholar
12. Goldstein, A.N., Echer, C.M., and Alivisatos, A.P., Science, 256, 1425 (1992).Google Scholar
13. Yang, X.C., Han, G.R., Du, P.Y., and Ding, Z.S., J. Chin. Ceram. Soc. 25, 332 (1997).Google Scholar
14. Ulrich, G.D. and Subramanina, N.S., Combust. Sci. Technol. 17, 119 (1977).CrossRefGoogle Scholar