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Symmetrically abrupt GaN/AlGaN superlattices by alternative interface–interruption scheme

Published online by Cambridge University Press:  23 January 2013

Xiaohong Chen ,
Na Lin ,
Duanjun Cai ,
Yong Zhang ,
Hangyang Chen  and
Junyong Kang
Xiaohong Chen
Affiliation:
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
Na Lin
Affiliation:
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
Duanjun Cai*
Affiliation:
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
Yong Zhang
Affiliation:
Technology Department, Xiamen Changelight Co., Ltd, Xiamen 361005, China
Hangyang Chen
Affiliation:
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
Junyong Kang*
Affiliation:
Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)e-mail: [email protected]
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Abstract

We report an alternative interruption scheme to effectively improve the abruptness of GaN/AlGaN superlattices by minimizing the asymmetric feature of different types of heterointerfaces. It is found by x-ray diffraction that the interface abruptness is degraded and the GaN thickness is reduced with the interruption time increasing. Detailed investigation with scanning transmission electron microscopy demonstrates that the Al diffusion and the interface etching effect at the GaN/AlGaN interface are the critical reasons leading to the interfacial asymmetry. An alternative interface–interruption scheme is then proposed to enhance the abruptness of the superlattice interfaces, and consequently, the emission efficiency can also be significantly enhanced.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 5 , 14 March 2013 , pp. 716 - 722
Copyright
Copyright © Materials Research Society 2013

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References

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