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Suppression of dislocation accumulation in GaAs film on Si substrate by combination of impurity doping and selective area growth

Published online by Cambridge University Press:  31 January 2011

Tetsuya Ohashi
Tetsuya Ohashi
Affiliation:
Hitachi Research Lab., Hitachi, Ltd., 4026 Kuji, Hitachi, 319-12, Japan
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Abstract

Dislocation accumulation in gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is examined by crystal plasticity simulation. A new approach to suppression of dislocation accumulation is proposed such that selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to localize the plastic deformation near the film/substrate interface and to keep the surface region of the film almost dislocation-free. Geometry of the selectively grown film and a strategy for partial doping of impurities, which suppresses the dislocation accumulation in the surface region of the film, are considered.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 11 , November 1992 , pp. 3032 - 3038
Copyright
Copyright © Materials Research Society 1992

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