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Subcritical Crack Growth in Single-crystal Silicon Using Micromachined Specimens

Published online by Cambridge University Press:  31 January 2011

A. M. Fitzgerald ,
R. S. Iyer ,
R.H. Dauskardt  and
T. W. Kenny
A. M. Fitzgerald*
Affiliation:
Dept. of Aeronautics and Astronautics, Stanford University, Stanford, California 94305
R. S. Iyer
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, California 94305
R.H. Dauskardt
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, California 94305
T. W. Kenny
Affiliation:
Dept. of Mechanical Engineering, Stanford University, Stanford, California 94305
*
a)Address all correspondence to this author. Present address: Sensant Corporation, 14470 Doolittle Dr., San Leandro, CA 94577. e-mail: [email protected]
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Abstract

A micromachined specimen with a test section only 150-μm thick was developed for investigating subcritical crack growth in silicon. Crack growth rates in the range 10−4–10−10 m/s were measured as a function of applied stress intensity (v–K curves) during tests in humid air and dry nitrogen lasting up to 24 h. The fracture toughness, KIc of {110} silicon was also measured at 1.15 ± 0.08 MPa m1/2. While some evidence MPa-m1/2 of subcritical crack growth appeared to occur in the region 0.9 KIc < K > 0.98 KIc, the extremely high crack growth exponent (n 100) and the high ratio of the apparent stress corrosion threshold, KIscc, to the fracture toughness, KIscc/KIc > 0.9, suggests that no clear evidence exists for a stress corrosion process in silicon exposed to humid air.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 3 , March 2002 , pp. 683 - 692
Copyright
Copyright © Materials Research Society 2002

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