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Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films

Published online by Cambridge University Press:  31 January 2011

T. Tsirlina ,
V. Lyakhovitskaya ,
S. Fiechter  and
R. Tenne
T. Tsirlina
Affiliation:
Department of Materials and Interfaces, Weizmann Institute, Rehovot 76100, Israel
V. Lyakhovitskaya
Affiliation:
Department of Materials and Interfaces, Weizmann Institute, Rehovot 76100, Israel
S. Fiechter
Affiliation:
Abteilung Solare Energetik, Hahn-Meitner Institut, 14109 Berlin, Germany
R. Tenne
Affiliation:
Department of Materials and Interfaces, Weizman Institute, Rehovot 76100, Israel
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Abstract

Recently, highly oriented WSe2 thin films, with the c axis of the crystallites perpendicular to the substrate, were reproducibly obtained by interposing a Ni/Cr thin layer between the substrate and a WO3 precursor film. In the present work the preparation conditions were varied to elucidate the growth mechanism of such films. A model for the growth mode is proposed. Based upon this analysis, WSe2 thin films with improved crystalline and electronic properties were obtained. The photoresponse spectrum for photoelectrochemical cells with the WSe2 electrode immersed into a selenosulfate solution was measured. Quantum efficiency of 0.1% was calculated from this spectrum.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2636 - 2646
Copyright
Copyright © Materials Research Society 2000

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