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Study on preparation, growth mechanism, and optoelectronic properties of highly oriented WSe2 thin films
Published online by Cambridge University Press: 31 January 2011
Abstract
Recently, highly oriented WSe2 thin films, with the c axis of the crystallites perpendicular to the substrate, were reproducibly obtained by interposing a Ni/Cr thin layer between the substrate and a WO3 precursor film. In the present work the preparation conditions were varied to elucidate the growth mechanism of such films. A model for the growth mode is proposed. Based upon this analysis, WSe2 thin films with improved crystalline and electronic properties were obtained. The photoresponse spectrum for photoelectrochemical cells with the WSe2 electrode immersed into a selenosulfate solution was measured. Quantum efficiency of 0.1% was calculated from this spectrum.
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