Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T15:07:14.851Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the resputtering effect during rf-sputter deposition of YBCO films

Published online by Cambridge University Press:  03 March 2011

Jun-Hao Xu ,
B.M. Moon  and
K.V. Rao
Jun-Hao Xu
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
B.M. Moon*
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
K.V. Rao
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
*
a)Present address: Department of Electrical Engineering, Korea University, Seoul, Korea.
Get access

Abstract

We propose an angular redistribution model to understand the negative ions resputtering effect in sputter depositing YBa2Cu3O7−x (YBCO) films. On the basis of this model, the negative oxygen ions resputtering effect has been greatly minimized by introducing a Cu mask between the substrate and the target to block energetic oxygen particles from directly bombarding the growing film. Thus, YBCO films with almost exact stoichiometric composition and zero resistance critical temperatures as high as 90 K are obtained under oxygen partial pressure as low as 3 mTorr in a temperature regime well beyond that proposed by R.H. Hammond and R. Bormann. Preliminary results of a modified masking and shiclding technique to eliminate the resputtering effect and fabricate large area (>1 in. × 1 in.) YBCO superconducting films with high uniformity are also presented.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 798 - 802
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Lee, W. Y., Salem, J., Lee, V., Rettner, C. T., Lim, G., Savoy, R., and Deline, V., in Thin Film Processing and Characterization at High-Temperature Superconductors, edited by Harper, J. M., Colton, R. J., and Feldman, L. C., AIP Conf. Proc. No. 165 (AIP, New York, 1987).Google Scholar
2Eom, C. B., Sun, J. Z., Yamamoto, K., Marshall, A. F., Luther, K. E., Geballe, T. H., and Laderman, S. S., Appl. Phys. Lett. 55, 595 (1989).CrossRefGoogle Scholar
3Migliuolo, M., Stamper, A. K., Greve, D. W., and Schlesinger, T. E., Appl. Lett. 54, 859 (1989).CrossRefGoogle Scholar
4Migliuolo, M., Belan, R. M., and Brewer, J. A., Appl. Phys. Lett. 56, 2572 (1990).CrossRefGoogle Scholar
5Ballentine, P. H., Kadin, A. M., and Mallory, D. S., IEEE Trans. Magn. 27, 997 (1991).CrossRefGoogle Scholar
6Stuart, R. V., Vacuum Technology, Thin Film, and Sputtering: An Introduction (Academic Press, New York, 1983).Google Scholar
7Ohring, M., The Material Science of Thin Films (Academic Press Inc., London, 1992).Google Scholar
8Xu, J.-H., Zheng, G.-G., Grishin, A. M., Moon, B. M., Rao, K. V., and Morland, J., Appl. Phys. Lett. 64, 1874 (1994).CrossRefGoogle Scholar
9Hammond, R. H. and Bormann, R., Physica C 162–164, 703 (1989).CrossRefGoogle Scholar