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A study of the effect of composition on the microstructural evolution of a–SixC1−x: H PECVD films: IR absorption and XPS characterizations

Published online by Cambridge University Press:  31 January 2011

E. Gat ,
M.A. El Khakani ,
M. Chaker ,
A. Jean ,
S. Boily ,
H. Pépin ,
J.C. Kieffer ,
J. Durand ,
B. Cros  and
F. Rousseaux
...Show all authors
E. Gat
Affiliation:
Laboratoire de Physicochimie des matériaux, URA 1312 CNRS, ENSCM, 8 rue de l'Ecole Normale, 34053 Montpellier Cedex 1, France
M.A. El Khakani
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
M. Chaker
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
A. Jean
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
S. Boily
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
H. Pépin
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
J.C. Kieffer
Affiliation:
INRS-Energie, 1650 Montée Ste-Julie, C.P. 1020, Varennes, Québec, Canada, J3X 1S2
J. Durand
Affiliation:
Laboratoire de Physicochimie des matériaux, URA 1312 CNRS, ENSCM, 8 rue de l'Ecole Normale, 34053 Montpellier Cedex 1, France
B. Cros
Affiliation:
Laboratoire de Physicochimie des matériaux, URA 1312 CNRS, ENSCM, 8 rue de l'Ecole Normale, 34053 Montpellier Cedex 1, France
F. Rousseaux
Affiliation:
Laboratoire de Microstructures et de Microélectronique, L2M/CNRS, 196 Av. H. Ravera, 92220 Bagneux, France
S. Gujrathi
Affiliation:
Université de Montréal, GCM, Case Postale 6128, Succursale “A”, Montréal, Québec, Canada, H3C 3J7
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Abstract

Amorphous silicon carbide films (a–SixC1−x :H) deposited by the argon- or helium-diluted PECVD technique were studied as a function of their composition. Microstructural investigations were mainly achieved by means of FTIR and XPS techniques. Nuclear techniques were used to obtain precise information on the film hydrogen content. The Si–H IR-absorption band was deconvoluted in different monohydride and dihydride silicon environments. The existence of SiH2 bonds in the Si-rich composition was evidenced. From the analysis of the C–H and Si–H absorption bands it is shown that hydrogen atoms are preferentially bonded to carbon atoms. The deconvolution of the Si2p core level peak suggests that above a composition of x ∊ 0.5, the noncarburized (Si, Si, H) local environment contribution increases to the detriment of the hydrocarburized (Si, C, H) environments. From the evolution of the C1s peak, it can be deduced that there is a change in the carbon atom bonding states when the film composition is varied. These results are correlated and discussed in terms of the local bonding environments and their evolution with film composition.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2478 - 2487
Copyright
Copyright © Materials Research Society 1992

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